Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 417/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
6.318 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
5.922 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
2.718 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4V, 10V | 80mOhm @ 3A, 10V | 2.5V @ 1mA | 6nC @ 5V | ±20V | 440pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 4.5A VS6 |
4.590 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | - | 56mOhm @ 2.2A, 10V | 2V @ 100µA | 14nC @ 10V | - | 510pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V U-DFN2020- |
8.262 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 11.6A (Ta) | 4.5V, 10V | 11.5mOhm @ 10A, 10V | 3V @ 250µA | 14.2nC @ 10V | ±20V | 1030pF @ 20V | - | 990mW (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
5.058 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V U-DFN2020- |
3.654 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 9.4A (Ta) | 4.5V, 10V | 18mOhm @ 10A, 10V | 3V @ 250µA | 15.3nC @ 10V | ±20V | 925pF @ 30V | - | 1.06W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 30V 9.8A POWERDI3333 |
17.125 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 20V | 11mOhm @ 12A, 20V | 3V @ 250µA | 58nC @ 10V | ±25V | 2987pF @ 15V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 700V 5.2A TO252-3 |
4.338 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI333 |
7.632 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI506 |
4.464 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 12.9A (Ta), 89.5A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 2.8V @ 250µA | 29.3nC @ 10V | ±20V | 1572pF @ 30V | - | 2.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET P-CH 40V 6A 8SOIC |
6.426 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 42mOhm @ 6A, 10V | 2.6V @ 250µA | 22nC @ 10V | ±20V | 1175pF @ 20V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET P-CH 12V 9A 8DFN |
5.760 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 9A (Ta) | 1.5V, 4.5V | 20mOhm @ 9A, 4.5V | 850mV @ 250µA | 23nC @ 4.5V | ±8V | 2100pF @ 6V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x2) | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET N-CH 100V 4.2A |
8.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta) | 6V, 10V | 80mOhm @ 3.3A, 10V | 3V @ 250µA | 25.2nC @ 10V | ±20V | 1172pF @ 50V | - | 980mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 100V 8A 8DFN |
6.912 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta) | 4.5V, 10V | 32mOhm @ 8A, 10V | 2.4V @ 250µA | 25nC @ 10V | ±20V | 840pF @ 50V | - | 4.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (2x2) | 8-VFDFN Exposed Pad |
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Infineon Technologies |
TRANSISTOR N-CH |
5.202 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 23A DPAK |
6.156 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Tc) | 4.5V, 10V | 31mOhm @ 5A, 10V | 2.5V @ 250µA | 20nC @ 10V | ±20V | 603pF @ 25V | - | 33W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK (SINGLE GAUGE) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 1.5A SOT223 |
3.654 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 20µA | 4nC @ 10V | ±20V | 80pF @ 500V | - | 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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ON Semiconductor |
MOSFET N-CH 30V 46A SO8FL |
5.598 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 20A 69A 5DFN |
5.778 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 69A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.1V @ 250µA | 26nC @ 10V | ±20V | 1683pF @ 15V | - | 2.55W (Ta), 30.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO252 |
3.384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CHANNEL 60V 7.8A 8SO |
2.160 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 7.8A (Tc) | 4.5V, 10V | 105mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | ±20V | 969pF @ 30V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI506 |
4.212 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 9.3A SO8FL |
8.946 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.3A (Ta), 53A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 28.5nC @ 10V | ±20V | 1954pF @ 15V | - | 920mW (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 5A 8SOP |
4.716 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 5A (Ta) | 4.5V, 10V | 52mOhm @ 2.5A, 10V | 2V @ 100µA | 20nC @ 10V | +20V, -25V | 890pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET P-CH 12V 8.2A 6DFN |
5.202 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 8.2A (Ta) | 1.8V, 4.5V | 19mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 100nC @ 4.5V | ±12V | 2875pF @ 6V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Nexperia |
MOSFET P-CH 12V SOT1220 |
7.182 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 8.2A (Ta) | 1.8V, 4.5V | 19mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 100nC @ 4.5V | ±12V | 2875pF @ 6V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 16.4A 52A 5DFN |
6.534 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.1V @ 250µA | 18.2nC @ 10V | ±20V | 1670pF @ 15V | - | 2.51W (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 13.5A 8-PQFN |
6.786 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 21A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.5A, 10V | 2.5V @ 250µA | 33nC @ 10V | ±20V | 1585pF @ 15V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 600V 2.8A TO252 |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.8A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 354pF @ 25V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |