Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 288/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 500V 15A TO-220 |
6.888 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4.5V @ 250µA | 123nC @ 10V | ±20V | 4080pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 42A TO247 |
4.626 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 185mOhm @ 500mA, 10V | 5V @ 4mA | 78nC @ 10V | ±30V | 5150pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 50A TO3P |
7.956 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94nC @ 10V | ±30V | 6300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 60A TO3P |
5.652 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 5V @ 4mA | 96nC @ 10V | ±30V | 6250pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 650V 48A TO-247 |
5.796 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 68mOhm @ 24A, 10V | 4.5V @ 4mA | 77nC @ 10V | ±30V | 4420pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 82A TO-268 |
4.698 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 82A (Tc) | 10V | 35mOhm @ 41A, 10V | 5V @ 250µA | 142nC @ 10V | ±20V | 4800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N-CH 900V 18.5A TO-247 |
5.670 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 900V | 18.5A (Tc) | 10V | 299mOhm @ 9A, 10V | 5V @ 100µA | 43nC @ 10V | ±30V | 1645pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 38A TO-247 |
7.812 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | ±20V | 2826pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 50A TO-247AD |
6.216 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 55mOhm @ 25A, 10V | 5V @ 250µA | 140nC @ 10V | ±20V | 4350pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 52A TO247 |
7.326 |
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HiPerFET™, PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 52A (Tc) | 10V | 120mOhm @ 26A, 10V | 4.5V @ 4mA | 113nC @ 10V | ±30V | 6800pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO247 |
8.154 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 9A TO-247 |
6.180 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 9A (Tc) | 10V | 900mOhm @ 500mA, 10V | 4.5V @ 2.5mA | 130nC @ 10V | ±20V | 2600pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 21A TO-247AD |
8.136 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 250mOhm @ 10.5A, 10V | 4V @ 4mA | 160nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 88A TO-3P |
4.338 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 300V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180nC @ 10V | ±20V | 6300pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 600V 75A TO247 |
8.172 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215nC @ 10V | ±20V | 12225pF @ 400V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 70V 76A TO-247AD |
7.956 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 70V | 76A (Tc) | 10V | 12mOhm @ 40A, 10V | 3.4V @ 4mA | 240nC @ 10V | ±20V | 4400pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 44A TO-268 D3 |
6.528 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 44A TO-264 |
5.310 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO247AC |
6.144 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | ±30V | 9620pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 70A TO-247 |
6.180 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 40mOhm @ 35A, 10V | 6.5V @ 4mA | 67nC @ 10V | ±20V | 3150pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO247 |
5.832 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 1500V 9A TO3PF-3 |
5.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 9A (Ta) | 10V | 3Ohm @ 3A, 10V | 4V @ 1mA | 114nC @ 10V | ±30V | 2025pF @ 30V | - | 3W (Ta), 78W (Tc) | 150°C (TJ) | Through Hole | TO-3PF-3 | TO-3P-3 Full Pack |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
6.354 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Microsemi |
MOSFET N-CH 800V 22A TO-247 |
5.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 500mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4595pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 75V 400A TO-247 |
7.758 |
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GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 400A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 250µA | 420nC @ 10V | ±20V | 24000pF @ 25V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 56A TO-264 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 75A TO247AD |
4.770 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 20mOhm @ 37.5A, 10V | 4V @ 4mA | 260nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 102A X2 PLUS247 |
6.180 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 102A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152nC @ 10V | ±30V | 10900pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 56A TO-247 |
4.392 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 250V 170A TO264 |
7.146 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190nC @ 10V | ±20V | 13500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXFK) | TO-264-3, TO-264AA |