Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 24/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET P-CH 60V 2.9A SOT-223 |
64.758 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 875pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 40V 50A TO252-3 |
97.848 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 10.6mOhm @ 50A, 10V | 2.2V @ 85µA | 59nC @ 10V | ±16V | 3900pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 150V 2A POWER33 |
219.630 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 2A (Ta), 8.4A (Tc) | 6V, 10V | 307mOhm @ 2A, 10V | 4V @ 250µA | 13nC @ 10V | ±25V | 885pF @ 75V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 20V 6A 8SOIC |
25.482 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.95V, 4.5V | 40mOhm @ 3A, 4.5V | 600mV @ 250µA | 11.5nC @ 4.5V | ±12V | 460pF @ 15V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 80V 30A DPAK |
99.300 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | ±16V | 1890pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 240V 0.48A SOT223 |
56.724 |
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- | P-Channel | MOSFET (Metal Oxide) | 240V | 480mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 80V 30A DPAK |
58.998 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | ±16V | 1890pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 44A DPAK |
82.260 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
343.278 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 18.3A TO-252 |
259.560 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.3A (Tc) | 4.5V, 10V | 60mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 1710pF @ 25V | - | 2.3W (Ta), 38.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 40A PPAK SO-8 |
138.204 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.5V @ 250µA | 48nC @ 10V | ±20V | 1785pF @ 20V | - | 5W (Ta), 34.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
51.552 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 7.9mOhm @ 20A, 10V | 3V @ 250µA | 30nC @ 10V | ±20V | 1155pF @ 15V | - | 4.8W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
24.240 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 15A, 10V | 2.4V @ 250µA | 65nC @ 10V | ±20V | 2730pF @ 15V | - | 5W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
21.690 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2.1V @ 250µA | 8.3nC @ 4.5V | ±20V | 1250pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V TRENCH SSOT-6 |
53.316 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 2.7A (Ta) | 6V, 10V | 109mOhm @ 2.7A, 10V | 4V @ 250µA | 5nC @ 10V | ±20V | 210pF @ 50V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia |
MOSFET N-CH 80V LFPAK |
51.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 67A (Tc) | 10V | 11mOhm @ 25A, 10V | 4V @ 1mA | 45nC @ 10V | ±20V | 2800pF @ 40V | - | 117W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 80V 40A TSDSON-8 |
37.524 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 10A (Ta), 40A (Tc) | 6V, 10V | 12.3mOhm @ 20A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 2.1W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 80V 55A TDSON-8 |
1.142.814 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 55A (Tc) | 6V, 10V | 12.3mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1870pF @ 40V | - | 2.5W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 20V POWER33 |
85.884 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta), 56A (Tc) | 1.8V, 4.5V | 6.5mOhm @ 14A, 4.5V | 1V @ 250µA | 61nC @ 4.5V | ±8V | 7435pF @ 10V | - | 2.3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET P-CH 20V 13.5A 8-SOIC |
197.670 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 1.8V, 4.5V | 8.5mOhm @ 13.5A, 4.5V | 1.5V @ 250µA | 120nC @ 4.5V | ±8V | 8237pF @ 10V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
221.088 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
314.094 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 12mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | ±16V | 3170pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 900V 1.7A DPAK |
92.604 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 7.2Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 500pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9.6A POWER33 |
1.150.836 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.6A (Ta), 16.5A (Tc) | 4.5V, 10V | 14mOhm @ 9.6A, 10V | 3V @ 250µA | 26nC @ 10V | ±20V | 1230pF @ 15V | - | 2.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 30V 6.5A SOT223 |
30.318 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 5V, 10V | 50mOhm @ 2A, 10V | 1V @ 250µA | 9nC @ 10V | ±16V | 330pF @ 25V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 60V 16A D2PAK |
31.644 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 5V, 10V | 90mOhm @ 8A, 10V | 1V @ 250µA (Min) | 10nC @ 4.5V | ±16V | 345pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC |
72.516 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 8.2mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | ±12V | 7980pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 3.4A 1212-8 |
201.246 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.4A (Ta) | 6V, 10V | 62mOhm @ 5.4A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Microchip Technology |
MOSFET N-CH 250V 360MA SOT89-3 |
93.390 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 360mA (Tj) | 0V | 6Ohm @ 200mA, 0V | - | - | ±20V | 350pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Infineon Technologies |
MOSFET N CH 40V 90A DPAK |
127.626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | ±20V | 4610pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |