Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 206/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 100V 4.2A DIRECTFET |
131.340 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7nC @ 10V | ±20V | 530pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SH | DirectFET™ Isometric SH |
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Vishay Siliconix |
MOSFET N-CH 30V 16.5A 8-SOIC |
24.420 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16.5A (Tc) | 4.5V, 10V | 9mOhm @ 10A, 10V | 3V @ 250µA | 35nC @ 10V | ±20V | 1525pF @ 15V | - | 2.5W (Ta), 4.45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Panasonic Electronic Components |
MOSFET N CH 24V 3A PMCP |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 24V | 3A (Ta) | 2.5V | 20mOhm @ 3A, 2.5V | 1.4V @ 1mA | - | ±12V | 1500pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 3-PMCP | 3-SMD, Non-Standard |
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Diodes Incorporated |
MOSFET P-CH 12V 6.6A 6-UFDFN |
9.711 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 6.6A (Ta) | 1.5V, 4.5V | 29mOhm @ 4A, 4.5V | 950mV @ 250µA | 26.1nC @ 8V | ±8V | 1357.4pF @ 10V | - | 613mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1616-6 (Type E) | 6-PowerUFDFN |
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Panasonic Electronic Components |
MOSFET N-CH 30V 7A 8HSSO |
7.074 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 24mOhm @ 4.5A, 10V | 3V @ 519µA | 3.9nC @ 4.5V | ±20V | 658pF @ 10V | - | 2W (Ta), 13W (Tc) | 150°C (TJ) | Surface Mount | HSSO8-F3-B | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 200V 0.1A TO92-3 |
27.114 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 100mA (Ta) | 10V | 25Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 45pF @ 25V | - | 625mW (Ta) | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 100V 1.7A SOT-223 |
4.104 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Tc) | 10V | 350mOhm @ 850mA, 10V | 4V @ 250µA | 7.5nC @ 10V | ±25V | 250pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Rohm Semiconductor |
RQ5L030SN IS A SMALL SIGNAL MOSF |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4V, 10V | 85mOhm @ 3A, 10V | 2.5V @ 1mA | 5nC @ 5V | ±20V | 380pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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ON Semiconductor |
MOSFET P-CH 20V 3.5A 6WDFN |
7.416 |
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µCool™ | P-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 40mOhm @ 3A, 4.5V | 1V @ 250µA | 15.7nC @ 4.5V | ±8V | 1329pF @ 16V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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Rohm Semiconductor |
MOSFET N-CH 20V 4A TSMT3 |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 35mOhm @ 4A, 4.5V | 1.3V @ 1mA | 8nC @ 4.5V | ±10V | 680pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 11A 8-HUML |
6.606 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.1mOhm @ 11A, 10V | 2V @ 250µA | 24nC @ 10V | ±20V | 1200pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET P-CH 20V 1A TUMT5 |
8.298 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 390mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | ±12V | 150pF @ 10V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | Surface Mount | TUMT5 | 6-SMD (5 Leads), Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 30V 15A 8-HSOP |
5.256 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 8.8mOhm @ 15A, 10V | 2.5V @ 1mA | 10nC @ 10V | ±20V | 590pF @ 15V | - | 3W (Ta), 22.9W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 90V 0.2A SOT23-5 |
3.078 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 200mA (Tj) | 0V | 6Ohm @ 200mA, 0V | - | - | ±20V | 150pF @ 25V | Depletion Mode | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-5 | SC-74A, SOT-753 |
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Rohm Semiconductor |
MOSFET P-CH 20V 4A TSMT6 |
4.734 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 50mOhm @ 4A, 4.5V | 2V @ 1mA | 12.2nC @ 4.5V | ±12V | 1350pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFETP-CHAN 450V SOT223 |
7.650 |
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- | P-Channel | MOSFET (Metal Oxide) | 450V | 600mA (Tc) | 10V | 21Ohm @ 300mA, 10V | 5V @ 250µA | 4.2nC @ 10V | ±30V | 1003pF @ 25V | - | 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 30V 11A POWERDI |
5.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 18A, 10V | 2.5V @ 250µA | 37nC @ 10V | ±20V | 2075pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 55V 5A SOT223 |
5.544 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Ta), 10.7A (Tc) | 5V | 40mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 1400pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 60V 14A TO252 |
5.400 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4.5V, 10V | 110mOhm @ 12A, 10V | 2.7V @ 250µA | 17.1nC @ 10V | ±20V | 984.7pF @ 30V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
15.294 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Panasonic Electronic Components |
MOSFET N-CH 100V 8A UG-1 |
28.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 4V, 10V | 230mOhm @ 4A, 10V | 2.5V @ 1mA | - | ±20V | 290pF @ 10V | - | 1W (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | U-G1 | U-G1 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 0.16A TLM3D6D8 |
2.574 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 160mA (Ta) | 1.2V, 4.5V | 3Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.46nC @ 4.5V | 8V | 9pF @ 15V | - | 125mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM3D6D8 | 3-XFDFN |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.14A TLM3D6D8 |
2.100 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 140mA (Ta) | 1.2V, 4.5V | 5Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | 8V | 10pF @ 15V | - | 125mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM3D6D8 | 3-XFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 8.0V 3.56A SOT-883 |
4.014 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.78A (Ta) | 1.8V, 4.5V | 460mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.79nC @ 4.5V | 8V | 43pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 30V 36A 8PDFN |
8.802 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 36A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2.5V @ 250µA | 29.3nC @ 10V | ±20V | 1829pF @ 15V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 62A 8PDFN |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.5V @ 250µA | 25.4nC @ 10V | ±20V | 1342pF @ 15V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 3.16A SOT23-3 |
4.068 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.16A (Ta) | 4.5V, 10V | 47mOhm @ 3.5A, 10V | 3V @ 250µA | 4.5nC @ 5V | ±20V | 305pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A ES6 |
2.484 |
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U-MOSII | P-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | - | ±20V | 137pF @ 15V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Diodes Incorporated |
MOSFET N-CH 40V 8.5A DPAK |
8.460 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 8.5A (Ta) | 4.5V, 10V | 36mOhm @ 12A, 10V | 3V @ 250µA | 9.2nC @ 10V | ±20V | 453pF @ 20V | - | 2.12W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 20V 7.3A 8SO |
3.582 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 7.3A (Ta) | 1.5V, 4.5V | 20mOhm @ 9.4A, 4.5V | 1.3V @ 250µA | 11.6nC @ 4.5V | ±8V | 1000pF @ 10V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |