Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 184/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 650V 44A TO220F |
22.992 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78nC @ 10V | ±30V | 3090pF @ 400V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-247AC |
11.856 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 11A TO-220FP |
8.364 |
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FDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 900pF @ 25V | - | 35W (Tc) | - | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
SUPERFET3 650V TO247 PKG |
7.812 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58nC @ 10V | ±30V | 2560pF @ 400V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 24A |
15.732 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 130mOhm @ 12A, 10V | 5V @ 250µA | 43nC @ 10V | ±25V | 1870pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO-220AB |
12.306 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1851pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET TO247-4 |
6.624 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
11.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 18mOhm @ 44A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V D2PAK (TO-2 |
23.640 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1851pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 46A I2PAKFP |
17.262 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 100V | 46A (Tc) | 10V | 9.6mOhm @ 23A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | 3305pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
15.102 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 120A TO-220 |
20.412 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.5mOhm @ 75A, 10V | 4.5V @ 250µA | 226nC @ 10V | ±20V | 14885pF @ 25V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO-220 |
6.336 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1030pF @ 50V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 15A I2PAK-FP |
13.536 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 270mOhm @ 7.5A, 10V | 4V @ 250µA | 44nC @ 10V | ±25V | 1280pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 600V 20A I2PAK |
19.596 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | ±25V | 1800pF @ 50V | - | 140W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 100V 140A TO-3P |
9.396 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 10mOhm @ 70A, 10V | 4V @ 250µA | 285nC @ 10V | ±25V | 7900pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 650V 82 MOHM TO220 P |
18.768 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81nC @ 10V | ±30V | 3410pF @ 400V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 12A TO-220 |
20.868 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 1375pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
SUPERFET3 650V TO220F PKG |
12.756 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 70nC @ 10V | ±30V | 3240pF @ 400V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 22A TO-247 |
19.920 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | 45nC @ 10V | ±30V | 1950pF @ 100V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 21A TO-247AC |
12.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | ±30V | 2322pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
15.780 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1562pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 40V 120A I2PAK |
14.058 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.7mOhm @ 60A, 10V | 4.5V @ 250µA | 377nC @ 10V | ±20V | 20000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO-247AC |
8.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 1900pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 21A |
6.264 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1500pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 22A I2PAK-FP |
14.460 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 36nC @ 10V | ±25V | 1440pF @ 100V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
13.500 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
18.240 |
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Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 650V 44A TO247 |
7.008 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78nC @ 10V | ±30V | 3090pF @ 400V | Super Junction | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB |
13.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |