Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 172/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
20.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 121A (Tc) | 4.5V, 10V | 3.3mOhm @ 21A, 10V | 2.5V @ 250µA | 79nC @ 10V | ±20V | 4456pF @ 20V | - | 3.1W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
RD3L220SNFRA IS A AUTOMOTIVE GRA |
18.786 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 4V, 10V | 26mOhm @ 22A, 10V | 3V @ 1mA | 30nC @ 10V | ±20V | 1500pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 40V 0.89A SOT89-3 |
16.332 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 890mA (Tj) | 5V, 10V | 1Ohm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 125pF @ 20V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
19.782 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 400V | ±16V | 364pF @ 400V | - | 43.1W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Texas Instruments |
MOSFET N-CHANNEL 25V 60A 8VSON |
17.682 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 2.5V, 8V | 4.5mOhm @ 20A, 8V | 1.1V @ 250µA | 9.2nC @ 4.5V | +10V, -8V | 1350pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
27.234 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 200V 3.7A IPAK |
49.170 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 430pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 8V 8SOIC |
76.512 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | - | 1.8V, 4.5V | 9mOhm @ 14A, 4.5V | 1V @ 250µA | 85nC @ 4.5V | ±8V | - | - | 3W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 8.8A 8-SOIC |
26.208 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 12mOhm @ 11.4A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 525V 5A DPAK |
24.738 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 5A (Tc) | 10V | 1.2Ohm @ 2.5A, 10V | 4.5V @ 100µA | - | ±30V | - | - | 70W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 500V 0.25A SOT89-3 |
80.772 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 250mA (Tj) | 4.5V, 10V | 13Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 500V 2.5A IPAK |
34.410 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.5Ohm @ 1.25A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 365pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 3A TO252 DPAK |
24.564 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 175pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 3A TO252 DPAK |
12.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 175pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 2.6A IPAK |
38.076 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 2.7Ohm @ 1.3A, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 460pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 40V 200A POWERPAK8 |
23.760 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.5V @ 250µA | 260nC @ 10V | ±20V | 13500pF @ 20V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 Single |
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Vishay Siliconix |
MOSFET N-CH 100V 95A SO-8 |
22.494 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 95A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 2866pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET P-CH 60V 10A TO-220FP |
20.256 |
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DeepGATE™, STripFET™ VI | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 160mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | ±20V | 340pF @ 48V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 1A IPAK |
26.490 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 8.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | ±30V | 156pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 38A IPAK |
19.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta), 36A (Tc) | 4.5V, 10V | 11mOhm @ 30A, 10V | 2.5V @ 250µA | 8.2nC @ 4.5V | ±20V | 774pF @ 15V | - | 1.38W (Ta), 24.6W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Rohm Semiconductor |
RS1E321GN IS A POWER MOSFET WITH |
20.298 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 80A (Tc) | 4.5V, 10V | 2.1mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | ±20V | 2850pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
16.836 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 400V | ±16V | 424pF @ 400V | - | 50W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 700V 10.5A IPAK |
15.258 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22nC @ 10V | ±20V | 474pF @ 100V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
SUPERFET3 650V PQFN88 |
24.252 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 250mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24nC @ 10V | ±30V | 1010pF @ 400V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power88 | 4-PowerTSFN |
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ON Semiconductor |
MOSFET N-CH 30V |
54.570 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 185A (Tc) | 4.5V, 10V | 1.23mOhm @ 35A, 10V | 2V @ 250µA | 110nC @ 10V | ±12V | 8183pF @ 15V | - | 2.3W (Ta), 64W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 40A TO263 |
22.656 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 4.5V, 10V | 25mOhm @ 40A, 10V | 2.5V @ 250µA | 70nC @ 10V | ±20V | 3380pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 640V 5A DPAK |
19.386 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 640V | 5A (Tc) | 10V | 1.05Ohm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 363pF @ 50V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A TO252AA |
22.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 950V 2A TO251 |
18.582 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 3.7Ohm @ 800mA, 10V | 3.5V @ 40µA | 6nC @ 10V | ±20V | 196pF @ 400V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 2.8A IPAK |
49.248 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 2.8A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 670pF @ 25V | - | 2.5W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |