Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 145/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 600V 43A TO247AC |
8.982 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 43A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 182nC @ 10V | ±30V | 3600pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 47A TO-3PN |
9.144 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 73mOhm @ 23.5A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 8000pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 560V 32A TO-247 |
8.136 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 32A (Tc) | 10V | 110mOhm @ 20A, 10V | 3.9V @ 1.8mA | 170nC @ 10V | ±20V | 4200pF @ 25V | - | 284W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 49A TO247 |
14.880 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 49A (Tc) | 10V | 62mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | ±25V | 3900pF @ 100V | - | 358W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 170A SUPER247 |
41.664 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | ±30V | 6790pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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ON Semiconductor |
MOSFET N CH 600V 77A TO-247 |
20.856 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 41mOhm @ 39A, 10V | 3.5V @ 250µA | 380nC @ 10V | ±20V | 13700pF @ 100V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 24A TO-247AD |
6.888 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 4mA | 160nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CHANNEL 250V 120A TO3P |
6.900 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 12mOhm @ 60A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7870pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO-247AD |
9.684 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9620pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 26A TO-247AC |
14.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 250mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 5020pF @ 25V | - | 470W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 53.5A TO247 |
10.152 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 53.5A (Tc) | 10V | 70mOhm @ 17.6A, 10V | 3.5V @ 1.76mA | 170nC @ 10V | ±20V | 3900pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
17.748 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600V M6 POWER MOSFET |
11.148 |
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MDmesh™ | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 80A TO-247 |
8.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 80A (Tc) | 10V | 40mOhm @ 40A, 10V | 4.5V @ 4mA | 144nC @ 10V | ±30V | 7753pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 35A TO3PF |
7.956 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72nC @ 10V | ±20V | 3000pF @ 25V | - | 102W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3P(N) |
7.392 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO-247-3 |
16.596 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 600V 17A TO220 |
9.192 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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GeneSiC Semiconductor |
TRANS SJT 1200V 15A |
20.400 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO-220-3 |
10.920 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 140A TO264 |
8.724 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 140A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255nC @ 10V | ±20V | 19000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1200V 3.5A TO-247 |
9.228 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31nC @ 10V | ±30V | 715pF @ 25V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 80A TO247AC |
10.152 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 30mOhm @ 40A, 10V | 4V @ 250µA | 443nC @ 10V | ±30V | 6900pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 42A TO-247AD |
12.642 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 42A (Tc) | 10V | 60mOhm @ 500mA, 10V | 4V @ 4mA | 220nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 77.5A TO247-3 |
8.496 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 77.5A (Tc) | 10V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 170nC @ 10V | ±20V | 8180pF @ 100V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 70V 110A TO-264AA |
9.432 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 70V | 110A (Tc) | 10V | 6mOhm @ 55A, 10V | 4V @ 8mA | 480nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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STMicroelectronics |
MOSFET N-CHANNEL 950V 38A TO247 |
12.576 |
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MDmesh™ DK5 | N-Channel | MOSFET (Metal Oxide) | 950V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 100nC @ 10V | ±30V | 3480pF @ 100V | - | 450W (Tc) | -55°C ~ 150°C | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 42A TO-247 |
21.594 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | ±25V | 4200pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-268 |
8.946 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335nC @ 10V | ±20V | 10700pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N-CH 650V TO-247 |
14.424 |
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Automotive, AEC-Q101, MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 49mOhm @ 23A, 10V | 5V @ 250µA | 142nC @ 10V | ±25V | 6420pF @ 100V | - | 330W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |