Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 126/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET P-CH 20V 14A U8FL |
12.642 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Ta) | 2.5V, 4.5V | 6.7mOhm @ 12A, 4.5V | 1V @ 250µA | 56nC @ 4.5V | ±8V | 5000pF @ 10V | - | 840mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 7A 8-SOIC |
36.012 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 23mOhm @ 7A, 10V | 2.5V @ 250µA | 13nC @ 10V | ±20V | 700pF @ 15V | Schottky Diode (Isolated) | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 7A TO252 |
56.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 516pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 80V 67A 8PDFN |
23.208 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 67A (Tc) | 4.5V, 10V | 8.9mOhm @ 12A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 6119pF @ 40V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 60V 100A TO252 |
46.836 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 3.9W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Vishay Siliconix |
MOSFET P-CH 60V 4.7A 8-SOIC |
19.416 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 4.7A (Tc) | 4.5V, 10V | 120mOhm @ 3.2A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 600pF @ 30V | - | 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 13.7A SO-8FL |
12.234 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13.7A (Ta), 115A (Tc) | 4.5V, 10V | 2.9mOhm @ 30A, 10V | 2.5V @ 250µA | 62nC @ 11.5V | ±16V | 3720pF @ 12V | - | 890mW (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Nexperia |
MOSFET N-CH 55V 46A D2PAK |
36.576 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 46A (Tc) | 4.5V, 10V | 21.7mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 1815pF @ 25V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 85A 8PQFN |
275.208 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 6V, 10V | 2.4mOhm @ 50A, 10V | 3.9V @ 100µA | 138nC @ 10V | ±20V | 4574pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 100V 32A D2PAK |
47.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 34.5mOhm @ 15A, 10V | 4V @ 1mA | 23.8nC @ 10V | ±20V | 1201pF @ 50V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 4.6A DPAK |
22.896 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.6A (Tc) | 10V | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16nC @ 10V | ±30V | 600pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
55.626 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5mOhm @ 15A, 10V | 2.5V @ 250µA | 123nC @ 10V | ±20V | 3950pF @ 15V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 170A 8PDFN |
47.658 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 170A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 2.5V @ 250µA | 150nC @ 10V | ±20V | 7942pF @ 20V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 23.5A 8SON |
24.564 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 23.5A (Ta), 100A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 1.9V @ 250µA | 21.5nC @ 4.5V | ±20V | 3252pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A TSDSON-8 |
84.480 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta). 40A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2V @ 250µA | 44nC @ 10V | ±20V | 2800pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 50A 8SON |
59.484 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Ta) | 6V, 10V | 13mOhm @ 12A, 10V | 3.5V @ 250µA | 18nC @ 10V | ±20V | 1480pF @ 30V | - | 3.2W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 6-MICROFET |
112.404 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13mOhm @ 11A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 1360pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 60V 16A DPAK |
65.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 5V | 47mOhm @ 16A, 5V | 3V @ 250µA | 62nC @ 10V | +10V, -8V | 1350pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 75A D2PAK |
102.120 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4.9mOhm @ 25A, 10V | 4V @ 1mA | 35.5nC @ 10V | ±20V | 2772pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 30V 100A D2PAK |
86.274 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4.1mOhm @ 15A, 10V | 2.15V @ 1mA | 41.5nC @ 10V | ±20V | 2400pF @ 15V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 25V 100A LFPAK |
59.970 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.5mOhm @ 15A, 10V | 2.15V @ 1mA | 76nC @ 10V | ±20V | 4830pF @ 12V | - | 109W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 500V 4.5A DPAK |
79.050 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | ±20V | 470pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 4A TO251 |
17.172 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 10V | ±16V | 158pF @ 400V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 32A DPAK |
31.314 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 60V 56A D2PAK |
47.766 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 5V | 12.8mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5nC @ 5V | ±10V | 2651pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 60V 58A D2PAK |
30.498 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 10V | 13mOhm @ 15A, 10V | 4V @ 1mA | 22.9nC @ 10V | ±20V | 1730pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 30V 8.9A 8-SOIC |
21.468 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 2.5V, 4.5V | 25mOhm @ 7.2A, 4.5V | 700mV @ 250µA | 23.1nC @ 4.5V | ±12V | 2480pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 80V 50A D2PAK |
24.198 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 17mOhm @ 10A, 10V | 4V @ 1mA | 26nC @ 10V | ±20V | 1573pF @ 40V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 6A TO251 |
13.890 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | ±16V | 211pF @ 400V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
45.984 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 110nC @ 10V | ±20V | 1485pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |