Transistor - FET, MOSFET - RF
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - RF
Record 3.043
Pagina 80/102
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di transistor | Frequenza | Guadagno | Tensione - Test | Corrente nominale (Amp) | Figura di rumore | Corrente - Test | Potenza - Uscita | Tensione - Nominale | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
IC RF FET LDMOS 190W H-49248H-4 |
3.472 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC FET RF LDMOS 55W H-36265-2 |
4.878 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-36248-2 |
3.654 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-36248-2 |
4.770 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-36248-2 |
6.156 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-36260-2 |
3.544 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-36260-2 |
6.714 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS 330W H-49248H-4 |
5.472 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS 330W H-49248H-4 |
6.336 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS 330W H-49248H-4 |
6.210 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS 330W H-49248H-4 |
5.670 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-49248H-4 |
7.506 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-49248H-4 |
8.082 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC RF FET LDMOS H-33288-6 |
3.330 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
RFP-LDMOS GOLDMOS 8 |
2.880 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
RF MOSFET N-CHANNEL 50V M113 |
6.696 |
|
- | N-Channel | 175MHz | 16dB | 50V | 100µA | - | 100mA | 30W | 170V | M113 | M113 |
|
|
|
Microsemi |
RF MOSFET N-CHANNEL 50V M174 |
3.060 |
|
- | N-Channel | 175MHz | 14dB | 50V | 50µA | - | 250mA | 150W | 130V | M174 | M174 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE150 |
3.006 |
|
DE | N-Channel | - | - | - | 9A | - | - | 200W | 200V | 6-SMD, Flat Lead Exposed Pad | DE150 |
|
|
|
IXYS-RF |
RF MOSFET 2 N-CHANNEL DE275 |
8.766 |
|
DE | 2 N-Channel (Dual) | - | - | - | 8A | - | - | 1180W | 1000V | 8-SMD, Flat Lead Exposed Pad | DE275 |
|
|
|
IXYS-RF |
RF MOSFET 2 N-CHANNEL DE275 |
7.596 |
|
DE | 2 N-Channel (Dual) | - | - | - | 16A | - | - | 1180W | 500V | 8-SMD, Flat Lead Exposed Pad | DE275 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE375 |
7.614 |
|
DE | N-Channel | - | - | - | 12A | - | - | 940W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE375 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE375 |
4.410 |
|
DE | N-Channel | - | - | - | 15A | - | - | 940W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE375 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE475 |
4.518 |
|
DE | N-Channel | - | - | - | 20A | - | - | 1800W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE475 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE475 |
8.838 |
|
DE | N-Channel | - | - | - | 48A | - | - | 1800W | 500V | 6-SMD, Flat Lead Exposed Pad | DE475 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE375 |
7.380 |
|
Z-MOS™ | N-Channel | 65MHz | 23dB | 100V | 8A | - | - | 880W | 1200V | 6-SMD, Flat Lead Exposed Pad | DE375 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE375 |
3.042 |
|
Z-MOS™ | N-Channel | 65MHz | 23dB | 100V | 18A | - | - | 880W | 600V | 6-SMD, Flat Lead Exposed Pad | DE375 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL |
7.254 |
|
Z-MOS™ | N-Channel | 65MHz | 23dB | 100V | 19A | - | - | 880W | 500V | 6-SMD, Flat Lead Exposed Pad | DE375 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL PLUS247-3 |
7.812 |
|
Z-MOS™ | N-Channel | 65MHz | 23dB | 100V | 8A | - | - | 250W | 1200V | TO-247-3 | PLUS247™-3 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL PLUS247-3 |
3.996 |
|
Z-MOS™ | N-Channel | 65MHz | 23dB | - | 19A | - | - | 350W | 500V | TO-247-3 | PLUS247™-3 |
|
|
|
Microsemi |
RF MOSFET N-CH 1000V TO247 |
3.816 |
|
- | N-Channel | 65MHz | 15dB | 50V | 25µA | - | - | 150W | 1000V | TO-247-3 | TO-247 |