Transistor - FET, MOSFET - RF
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - RF
Record 3.043
Pagina 3/102
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di transistor | Frequenza | Guadagno | Tensione - Test | Corrente nominale (Amp) | Figura di rumore | Corrente - Test | Potenza - Uscita | Tensione - Nominale | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440193 |
8.436 |
|
GaN | HEMT | 0Hz ~ 3GHz | 11dB | 50V | 8.7A | - | 600mA | 116W | 125V | 440193 | 440193 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440162 |
5.922 |
|
GaN | HEMT | 1.2GHz ~ 1.4GHz | 18dB | 50V | 42mA | - | 500mA | 330W | 125V | 440162 | 440162 |
|
|
|
Ampleon |
RF FET LDMOS 110V 24DB SOT539A |
6.768 |
|
- | LDMOS (Dual), Common Source | 225MHz | 24dB | 50V | 88A | - | 40mA | 1200W | 110V | SOT539A | SOT539A |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440223 |
5.670 |
|
GaN | HEMT | 0Hz ~ 1GHz | 24dB | 50V | 12.1A | - | 1A | 180W | 125V | 440223 | 440223 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440199 |
1.673 |
|
GaN | HEMT | 0Hz ~ 2.5GHz | 19dB | 28V | 56A | - | 2A | 220W | 84V | 440199 | 440199 |
|
|
|
Ampleon |
RF MOSFET LDMOS 32V SOT502A |
6.678 |
|
- | LDMOS | 2.7GHz ~ 3.1GHz | 13dB | 32V | 4µA | - | 400mA | 400W | 65V | SOT-502A | SOT502A |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440117 |
6.528 |
|
GaN | HEMT | 1.2GHz ~ 1.4GHz | 17dB | 50V | 36A | - | 500mA | 500W | 125V | 440117 | 440117 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 40V 440210 |
1.246 |
|
GaN | HEMT | 7.9GHz ~ 9.6GHz | 10.2dB | 40V | 12A | - | 1A | 131W | 100V | 440210 | 440210 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 40V 440217 |
6.168 |
|
GaN | HEMT | 5GHz | 11.8dB | 40V | 17A | - | 1A | 200W | 125V | 440217 | 440217 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440217 |
6.432 |
|
GaN | HEMT | 5.2GHz ~ 5.9GHz | 11.2dB | 50V | 24A | - | 1A | 450W | 125V | 440217 | 440217 |
|
|
|
ON Semiconductor |
RF MOSFET N-CH JFET 10V SOT23 |
68.454 |
|
Automotive, AEC-Q101 | N-Channel JFET | - | 12dB | 10V | 60mA | - | 10mA | - | 25V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
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|
ON Semiconductor |
RF MOSFET N-CH JFET 10V SOT23 |
57.576 |
|
- | N-Channel JFET | 450MHz | 12dB | 10V | 60mA | 3dB | 10mA | - | 25V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
|
ON Semiconductor |
JFET N-CH 25V 30MA SOT23 |
23.034 |
|
- | N-Channel JFET | 450MHz | 12dB | 10V | 30mA | 3dB | 10mA | - | 25V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
|
ON Semiconductor |
JFET N-CH 15V 50MA SOT23 |
89.508 |
|
- | N-Channel JFET | 1kHz | - | 5V | 50mA | 1dB | 1mA | - | 15V | TO-236-3, SC-59, SOT-23-3 | 3-CP |
|
|
|
CEL |
RF FET 4V 20GHZ 4MICROX |
84.990 |
|
- | pHEMT FET | 20GHz | 13.8dB | 2V | 15mA | 0.8dB | 10mA | 125mW | 4V | 4-Micro-X | 4-Micro-X |
|
|
|
CEL |
RF FET 4V 12GHZ 4MICROX |
19.494 |
|
- | pHEMT FET | 12GHz | 13.7dB | 2V | 15mA | 0.5dB | 10mA | 125mW | 4V | 4-Micro-X | 4-Micro-X |
|
|
|
NXP |
FET RF 65V 2.17GHZ PLD1.5W |
2.511 |
|
- | LDMOS | 2.17GHz | 22dB | 28V | - | - | 70mA | 28.8dBm | 65V | PLD-1.5W | PLD-1.5W |
|
|
|
NXP |
FET RF 40V 870MHZ TO-270-2 |
16.992 |
|
- | LDMOS | 870MHz | 17.2dB | 13.6V | - | - | 500mA | 31W | 40V | TO-270AA | TO-270-2 |
|
|
|
STMicroelectronics |
FET RF 40V 500MHZ PWRSO10 |
17.112 |
|
- | LDMOS | 500MHz | 17dB | 12.5V | 2.5A | - | 50mA | 3W | 40V | PowerSO-10 Exposed Bottom Pad | 10-PowerSO |
|
|
|
Ampleon |
RF FET LDMOS 65V 17DB 16VDFN |
22.392 |
|
- | LDMOS (Dual), Common Source | 2.14GHz | 17dB | 28V | - | - | 110mA | 2W | 65V | 16-VDFN Exposed Pad | 16-HVSON (6x4) |
|
|
|
STMicroelectronics |
FET RF 40V 500MHZ PWRSO10 |
141 |
|
- | LDMOS | 500MHz | 17dB | 12.5V | 4A | - | 150mA | 8W | 40V | PowerSO-10 Exposed Bottom Pad | 10-PowerSO |
|
|
|
Ampleon |
RF FET LDMOS 104V 22DB 12VDFN |
6.084 |
|
- | LDMOS (Dual), Common Source | 860MHz | 22.4dB | 50V | - | - | 30mA | 5W | 104V | 12-VDFN Exposed Pad | 12-HVSON (6x4) |
|
|
|
Ampleon |
RF FET LDMOS 65V 16DB 12VDFN |
15.828 |
|
- | LDMOS (Dual), Common Source | 2.14GHz | 16dB | 28V | - | - | 110mA | 2W | 65V | 12-VDFN Exposed Pad | 12-HVSON (6x4) |
|
|
|
Microwave Technology Inc. |
FET RF 5V 12GHZ PKG 73 |
18.648 |
|
- | MESFET | 100MHz ~ 12GHz | 10dB | 5V | 240mA | 2dB | 240mA | 300mW | 5V | Nonstandard SMD | 73 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE150 |
9.180 |
|
DE | N-Channel | - | - | - | 2A | - | - | 200W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE150 |
|
|
|
STMicroelectronics |
TRANS RF PWR N-CH POWERSO-10RF |
8.172 |
|
- | LDMOS | 2GHz | 11dB | 13.6V | 7A | - | 350mA | 15W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
|
|
|
M/A-Com Technology Solutions |
FET RF 65V 400MHZ 211-07 |
13.440 |
|
- | N-Channel | 400MHz | 16dB | 28V | 2.5A | 1dB | 25mA | 15W | 65V | 211-07 | 211-07, Style 2 |
|
|
|
NXP |
RF MOSFET LDMOS 50V TO247 |
7.428 |
|
- | LDMOS | 27MHz ~ 250MHz | 18.7dB | 50V | - | - | - | 300W | - | TO-247-3 | TO-247 |
|
|
|
NXP |
FET RF 110V 220MHZ TO-272-4 |
19.116 |
|
- | LDMOS | 220MHz | 25dB | 50V | - | - | 450mA | 150W | 110V | TO-272BB | TO-272 WB-4 |
|
|
|
M/A-Com Technology Solutions |
FET RF 120V 175MHZ 211-07 |
398 |
|
- | N-Channel | 30MHz ~ 175MHz | 15dB ~ 18dB | 50V | 6A | - | 100mA | 30W | 120V | 211-07 | 211-07, Style 2 |