Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 997/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 6A TO220-2 |
225 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 6A | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 316pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 6A TO252-2 |
8.460 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 316pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
8.586 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 635pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 10A TO247-2 |
5.976 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 635pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 10A TO252-2 |
4.824 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 635pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.7KV 10A TO247-2 |
3.330 |
|
Amp+™ | Silicon Carbide Schottky | 1700V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1700V | 812pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 20A TO247-2 |
231 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 20A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 1270pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.7KV 20A TO247-2 |
7.938 |
|
Amp+™ | Silicon Carbide Schottky | 1700V | 20A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1700V | 1624pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
5.724 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 1905pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 175V 100MA DO7 |
2.556 |
|
Military, MIL-PRF-19500/169 | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 175V 100MA DO7 |
3.060 |
|
Military, MIL-PRF-19500/169 | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50µs | 100nA @ 175V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 600V 300A DO9 |
7.650 |
|
Military, MIL-PRF-19500/586 | Standard | 600V | 300A | 1.55V @ 940A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 400V 100A DO205AA |
4.086 |
|
Military, MIL-PRF-19500/246 | Standard | 400V | 100A | 1.55V @ 310A | Small Signal =< 200mA (Io), Any Speed | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
|
|
Microsemi |
DIODE GEN PURP 600V 100A DO205AA |
8.532 |
|
Military, MIL-PRF-19500/246 | Standard | 600V | 100A | 1.55V @ 310A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
|
|
Microsemi |
DIODE GP 1KV 100A DO205AA |
6.534 |
|
Military, MIL-PRF-19500/246 | Standard | 1000V | 100A | 1.55V @ 310A | Small Signal =< 200mA (Io), Any Speed | - | 10mA @ 1000V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
|
|
Microsemi |
DIODE GEN PURP 100V 12A DO203AA |
2.574 |
|
Military, MIL-PRF-19500/304 | Standard | 100V | 12A | 1.5V @ 38A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 100V 12A DO203AA |
4.464 |
|
Military, MIL-PRF-19500/304 | Standard | 100V | 12A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 200V 12A DO203AA |
2.934 |
|
Military, MIL-PRF-19500/304 | Standard | 200V | 12A | 1.5V @ 38A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 400V 12A DO203AA |
689 |
|
Military, MIL-PRF-19500/304 | Standard | 400V | 12A | 1.5V @ 38A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 400V 12A DO35 |
6.156 |
|
Military, MIL-PRF-19500/304 | Standard | 400V | 12A | 1.5V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 200ns | 10µA @ 400V | 115pF @ 10V, 1MHz | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 400V 12A DO203AA |
7.326 |
|
Military, MIL-PRF-19500/304 | Standard | 400V | 12A | 1.5V @ 38A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 50V 50A DO203AB |
4.212 |
|
Military, MIL-PRF-19500/308 | Standard | 50V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 15µA @ 50V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 100V 50A DO5 |
2.304 |
|
Military, MIL-PRF-19500/308 | Standard | 100V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 100V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-35 | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 100V 50A DO203AB |
4.500 |
|
Military, MIL-PRF-19500/308 | Standard | 100V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 200V 50A DO203AB |
6.246 |
|
Military, MIL-PRF-19500/308 | Standard | 200V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 200V 50A DO5 |
6.462 |
|
Military, MIL-PRF-19500/308 | Standard | 200V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 15µA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 200V 50A DO203AB |
8.082 |
|
Military, MIL-PRF-19500/308 | Standard | 200V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 15µA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 300V 50A DO203AB |
4.554 |
|
Military, MIL-PRF-19500/308 | Standard | 300V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 300V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 300V 50A DO5 |
7.794 |
|
Military, MIL-PRF-19500/308 | Standard | 300V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 15µA @ 300V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 50V 150MA DO35 |
3.006 |
|
Military, MIL-PRF-19500/337 | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |