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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 980/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
GP10YHM3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.6KV 1A DO204AL
8.730
Automotive, AEC-Q101
Standard
1600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1600V
5pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
GP10Y-M3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.6KV 1A DO204AL
8.604
Automotive, AEC-Q101
Standard
1600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1600V
5pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
MBRB10H35-E3/81
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 35V 10A TO263AB
5.580
Automotive, AEC-Q101
Schottky
35V
10A
850mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 175°C
MBRB10H35HE3/81
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 35V 10A TO263AB
7.398
Automotive, AEC-Q101
Schottky
35V
10A
850mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 175°C
MBRB10H45HE3/81
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V 10A TO263AB
6.120
Automotive, AEC-Q101
Schottky
45V
10A
850mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 175°C
AS3BJHM3/52T
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 600V 3A DO214AA
6.336
-
Avalanche
600V
3A
1.05V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
20µA @ 600V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
BA604-GS08
Vishay Semiconductor Diodes Division
DIODE GP 50V 200MA SOD80
7.812
Automotive, AEC-Q101
Standard
50V
200mA (DC)
1.1V @ 50mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
50nA @ 20V
4pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
-65°C ~ 175°C
ES2DHE3J/52T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 2A DO214AC
5.040
-
Standard
200V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 200V
18pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
FESE16DT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 16A TO220AC
7.632
-
Standard
200V
16A
975mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
175pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
FESE16FT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 16A TO220AC
5.274
-
Standard
300V
16A
1.3V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
175pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
FESE16GT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 16A TO220AC
2.412
-
Standard
400V
16A
1.3V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
175pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
FESE8DT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 8A TO220AC
3.006
-
Standard
200V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
85pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
FESE8FT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 8A TO220AC
6.534
-
Standard
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
85pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
FESE8GT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 8A TO220AC
3.526
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
85pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
M3045S-M3/4W
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V 30A TO220AB
4.968
-
Schottky
45V
30A
700mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
980pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-65°C ~ 150°C
MBRB10H35-E3/45
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 35V 10A TO263AB
5.310
Automotive, AEC-Q101
Schottky
35V
10A
850mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 175°C
1N4002GP-M3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO204AL
3.924
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
1N4003GPHM3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AL
4.788
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
BYC15-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220AC
8.010
-
Standard
600V
15A
3.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
18ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
BYC20D-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 20A TO220AC
3.834
-
Standard
600V
20A
2.9V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
BYC20DX-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 20A TO220F
2.934
-
Standard
600V
20A
2.9V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 600V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220F
175°C (Max)
BYC30WT-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 30A TO247-3
6.498
-
Standard
600V
30A
2.75V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
10µA @ 600V
-
Through Hole
TO-247-3
TO-247-3
175°C (Max)
NUR460P/L05U
WeEn Semiconductors
DIODE GEN PURP 600V 4A DO201AD
7.704
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1.5V
-
Through Hole
DO-201AD, Axial
DO-201AD
-
NUR460P/L06U
WeEn Semiconductors
DIODE GEN PURP 600V 4A DO201AD
3.006
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-
NUR460P/L07U
WeEn Semiconductors
DIODE GEN PURP 600V 4A DO201AD
8.190
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-
NUR460PU
WeEn Semiconductors
DIODE GEN PURP 600V 4A DO201AD
4.572
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-
NHPJ08S600G
ON Semiconductor
DIODE GEN PURP 600V 8A TO220FP
6.768
-
Standard
600V
8A
3.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
30µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220FP
-55°C ~ 150°C
NHPJ15S600G
ON Semiconductor
DIODE GEN PURP 600V 15A TO220FP
6.390
-
Standard
600V
15A
3.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
60µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220FP
-55°C ~ 150°C
RD0504T-P-TL-H
ON Semiconductor
DIODE GEN PURP 400V 5A TPFA
8.586
-
Standard
400V
5A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
17ns
20µA @ 400V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TP-FA
-
RD0506LS-SB-1H
ON Semiconductor
DIODE GEN PURP 600V 5A TO220FP
6.318
-
Standard
600V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2FS
150°C (Max)