Raddrizzatori - Singoli
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 965/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE GEN PURP 1KV 1.5A AXIAL |
8.982 |
|
- | Standard | 1000V | 1.5A | 2V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 1.5A AXIAL |
3.726 |
|
- | Standard | 400V | 1.5A | 1.1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 1.5A AXIAL |
4.014 |
|
- | Standard | 400V | 1.5A | 1.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 3A AXIAL |
4.158 |
|
- | Standard | 600V | 3A | 1.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 1.5A AXIAL |
5.544 |
|
- | Standard | 800V | 1.5A | 1.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 1.5A AXIAL |
8.622 |
|
- | Standard | 1000V | 1.5A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1.3KV 1.5A AXIAL |
6.390 |
|
- | Standard | 1300V | 1.5A | 1.8V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1300V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1.3KV 1.5A AXIAL |
3.996 |
|
- | Standard | 1300V | 1.5A | 1.8V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1300V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 2A AXIAL |
3.454 |
|
- | Standard | 400V | 2A | 1.3V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 3.5A AXIAL |
2.700 |
|
- | Standard | 200V | 3.5A | 1.3V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 5A AXIAL |
7.434 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 40V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 2A AXIAL |
7.848 |
|
- | Standard | 200V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 3A AXIAL |
5.598 |
|
- | Standard | 600V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 1.2A AXIAL |
3.582 |
|
- | Standard | 1000V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 250MA AXIAL |
7.398 |
|
- | Standard | 600V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 3A SOD132 |
5.958 |
|
- | Standard | 600V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | - | - | Surface Mount | DO-214AA, SMB | SMB | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220AC |
7.866 |
|
- | Standard | 600V | 10A | 1.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | - | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220F |
8.874 |
|
- | Standard | 600V | 10A | 2.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 200µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 75V 150MA SOD123FL |
3.598 |
|
- | Standard | 75V | 150mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | - | Surface Mount | SOD-123F | SOD-123FL | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
7.596 |
|
- | Standard | 75V | 150mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | - | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 5A TO252 |
4.014 |
|
- | Standard | 600V | 5A | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 1µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 10A TO252 |
3.510 |
|
- | Standard | 600V | 10A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 1µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 5A TO220FP |
6.084 |
|
- | Standard | 600V | 5A | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 10A TO220FP |
6.012 |
|
- | Standard | 600V | 10A (DC) | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 10A TO220FP |
7.488 |
|
- | Standard | 600V | 10A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A TO220FP |
2.376 |
|
- | Standard | 600V | 20A (DC) | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 30A TO220FP |
8.208 |
|
- | Standard | 600V | 30A | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
7.416 |
|
eSMP® | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
6.426 |
|
eSMP® | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
2.358 |
|
eSMP® | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |