Raddrizzatori - Singoli

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 942/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
DLM10E-AT1	ON Semiconductor	DIODE GEN PURP 400V 1A DO204AL	2.898	-	Standard	400V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DLN10C-AT1	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL	3.546	-	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	R-1, Axial	-	150°C (Max)
DLN10C-BT	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL	4.320	-	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	R-1, Axial	-	150°C (Max)
DSE010-TR-E	ON Semiconductor	DIODE GEN PURP 80V 100MA	5.526	-	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0.5V, 1MHz	-	-	-	-55°C ~ 125°C
DSF10TB-AT1	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL	5.166	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TB-BT	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL	2.124	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TC-AT1	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL	7.488	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TC-BT	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL	2.322	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSK10B-AT1	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL	2.916	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	Axial	-	150°C (Max)
DSK10B-BT	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL	7.092	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	Axial	-	150°C (Max)
DSK10C-AT1	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL	2.592	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	R-1, Axial	-	150°C (Max)
DSK10C-BT	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL	5.508	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	R-1, Axial	-	150°C (Max)
DSK10C-ET1	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL	2.376	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	R-1, Axial	-	150°C (Max)
DSK10E-AT1	ON Semiconductor	DIODE GEN PURP 400V 1A AXIAL	6.768	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	R-1, Axial	-	150°C (Max)
DSK10E-BT	ON Semiconductor	DIODE GEN PURP 400V 1A AXIAL	2.934	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	R-1, Axial	-	150°C (Max)
DSK10E-ET1	ON Semiconductor	DIODE GEN PURP 400V 1A AXIAL	7.560	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	R-1, Axial	-	150°C (Max)
RD0106T-TL-H	ON Semiconductor	DIODE GEN PURP 600V 1A TPFA	8.028	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TP-FA	150°C (Max)
RD0504T-TL-H	ON Semiconductor	DIODE GEN PURP 400V 5A TPFA	2.100	-	Standard	400V	5A	1.5V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 400V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TP-FA	150°C (Max)
RD0506T-TL-H	ON Semiconductor	DIODE GEN PURP 600V 5A TPFA	6.876	-	Standard	600V	5A	1.6V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TP-FA	150°C (Max)
SB10-03A2-AT1	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41	4.716	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	150°C (Max)
SB10-03A2-BT	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41	2.862	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	150°C (Max)
SB10-03A3-AT1	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41	7.578	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-03A3-BT	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41	6.192	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-04A3-AT1	ON Semiconductor	DIODE SCHOTTKY 40V 1A DO41	7.470	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 40V	45pF @ 10V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-04A3-BT	ON Semiconductor	DIODE SCHOTTKY 40V 1A DO41	8.622	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 40V	45pF @ 10V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-05A2-AT1	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41	6.966	-	Schottky	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-05A2-BT	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41	6.876	-	Schottky	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-05A3-AT1	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41	7.686	-	Schottky	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-05A3-BT	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41	5.364	-	Schottky	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB11-04HP-TR-E	ON Semiconductor	DIODE SCHOTTKY 40V 1.1A 2SMD	6.750	-	Schottky	40V	1.1A	550mV @ 1.1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	2-SMD, J-Lead	SMD	125°C (Max)

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