Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 890/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
4.860 |
|
SUPERECTIFIER® | Standard | 100V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 500MA DO213 |
5.562 |
|
SUPERECTIFIER® | Standard | 150V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
5.094 |
|
SUPERECTIFIER® | Standard | 200V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
7.830 |
|
SUPERECTIFIER® | Standard | 300V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
6.174 |
|
SUPERECTIFIER® | Standard | 400V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
4.824 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
2.862 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO213AB |
6.300 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
4.014 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 1A DO213AB |
3.330 |
|
SUPERECTIFIER® | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 14pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
7.812 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 14pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
7.740 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
7.542 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
6.030 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO204AL |
7.794 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO204AL |
8.046 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
4.086 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
8.622 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 1A DO204AL |
8.082 |
|
SUPERECTIFIER® | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
3.636 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
3.472 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A DO204AC |
3.222 |
|
SUPERECTIFIER® | Standard | 50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO204AC |
3.870 |
|
SUPERECTIFIER® | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO204AC |
8.316 |
|
SUPERECTIFIER® | Standard | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
6.246 |
|
SUPERECTIFIER® | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 2A DO204AC |
6.174 |
|
SUPERECTIFIER® | Standard | 300V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO204AC |
3.312 |
|
SUPERECTIFIER® | Standard | 400V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A GP20 |
7.794 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A GP20 |
2.898 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A GP20 |
6.912 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |