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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 793/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
VSKEL240-20S30
Vishay Semiconductor Diodes Division
DIODE GEN PURP 2KV 240A MAGNAPAK
6.750
-
Standard
2000V
240A
-
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 2000V
-
Chassis Mount
3-MAGN-A-PAK™
MAGN-A-PAK®
-
VSKEL240-25S30
Vishay Semiconductor Diodes Division
DIODE GP 2.5KV 240A MAGNAPAK
3.418
-
Standard
2500V
240A
-
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 2500V
-
Chassis Mount
3-MAGN-A-PAK™
MAGN-A-PAK®
-
10ETF10
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 10A TO220AC
8.406
-
Standard
1000V
10A
1.33V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
310ns
100µA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
10ETF12
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 10A TO220AC
8.784
-
Standard
1200V
10A
1.33V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
310ns
100µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
10ETS12
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 10A TO220AC
4.698
-
Standard
1200V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
20ETF02
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 20A TO220AC
6.804
-
Standard
200V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
20ETF04
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 20A TO220AC
8.370
-
Standard
400V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
20ETF06
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 20A TO220AC
7.812
-
Standard
600V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
20ETF08
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 20A TO220AC
7.488
-
Standard
800V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 800V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
20ETF10
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 20A TO220AC
2.628
-
Standard
1000V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
20ETF12
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 20A TO220AC
2.068
-
Standard
1200V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
10ETS08FP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 10A TO220FP
5.868
-
Standard
800V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
10ETS12FP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 10A TO220FP
5.580
-
Standard
1200V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1200V
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
20ETF02FP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 20A TO220FP
8.460
-
Standard
200V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 200V
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
20ETF04FP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 20A TO220FP
4.036
-
Standard
400V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 400V
-
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
-40°C ~ 150°C
20ETF06FP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 20A TO220FP
716
-
Standard
600V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
20ETS08FP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 20A TO220FP
5.922
-
Standard
800V
20A
1.1V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 800V
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
20ETS12FP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 20A TO220FP
7.668
-
Standard
1200V
20A
1.1V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1200V
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
30CPF04
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 30A TO247AC
4.734
-
Standard
400V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
30CPF06
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247AC
6.444
-
Standard
600V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
30CPF10
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 30A TO247AC
3.490
-
Standard
1000V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
450ns
100µA @ 1000V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
30CPF12
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 30A TO247AC
3.780
-
Standard
1200V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
450ns
100µA @ 1200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
30EPF02
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 30A TO247AC
123
-
Standard
200V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 200V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
30EPF04
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 30A TO247AC
3.384
-
Standard
400V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 400V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
30EPF06
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247AC
6.534
-
Standard
600V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
30EPF10
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 30A TO247AC
236
-
Standard
1000V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
450ns
100µA @ 1000V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
30EPF12
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 30A TO247AC
3.454
-
Standard
1200V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 1200V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
40EPF02
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 40A TO247AC
169
-
Standard
200V
40A
1.25V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 200V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
40EPF04
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 40A TO247AC
3.526
-
Standard
400V
40A
1.25V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 400V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
40EPF06
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 40A TO247AC
8.334
-
Standard
600V
40A
1.25V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C