Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 774/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP |
DIODE GEN PURP 1.5KV 10A TO220AC |
7.596 |
|
- | Standard | 1500V | 10A (DC) | 1.8V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 100µA @ 1300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
|
NXP |
DIODE GEN PURP 1.5KV 6A TO220AC |
5.616 |
|
- | Standard | 1500V | 6A (DC) | 1.6V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 250µA @ 1300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
|
NXP |
DIODE GEN PURP 80V 215MA SMT3 |
3.330 |
|
- | Standard | 80V | 215mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 500nA @ 80V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 150°C (Max) |
|
|
|
NXP |
DIODE GEN PURP 80V 215MA SMT3 |
8.010 |
|
- | Standard | 80V | 215mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 500nA @ 80V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 150°C (Max) |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 3A POWERMITE3 |
7.488 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 180pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 100V 3A |
5.364 |
|
- | Schottky | 100V | 3A | 760mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 100pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 200V 3A DO201AD |
3.366 |
|
- | Standard | 200V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 50V 3A DO201AD |
4.428 |
|
- | Standard | 50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 100V 8A TO220A |
3.490 |
|
- | Standard | 100V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220a | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 50V 1A DO41 |
4.806 |
|
- | Standard | 50V | 1A | 975mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 100V 1A SMB |
6.354 |
|
- | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 20V 1A SMB |
7.956 |
|
- | Schottky | 20V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 60V 5A POWERMITE3 |
4.104 |
|
- | Schottky | 60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 200V 3A DO201AD |
6.300 |
|
- | Standard | 200V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 800V 8A TO220AC |
7.704 |
|
- | Standard | 800V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
|
NXP |
DIODE GEN PURP 1.2KV 8A TO220F |
5.400 |
|
- | Standard | 1200V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 145ns | 1mA @ 1000V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
|
NXP |
DIODE SCHOTTKY 40V 500MA SMT3 |
6.786 |
|
- | Schottky | 40V | 500mA (DC) | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | 90pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 125°C (Max) |
|
|
|
NXP |
DIODE GEN PURP 100V 200MA ALF2 |
8.838 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
|
|
NXP |
DIODE GEN PURP 100V 200MA ALF2 |
8.280 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | - |
|
|
|
NXP |
DIODE GEN PURP 100V 200MA ALF2 |
8.136 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
|
|
Nexperia |
DIODE SCHOTTKY 60V 1A 6TSOP |
3.078 |
|
- | Schottky | 60V | 1A (DC) | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 60V | 60pF @ 4V, 1MHz | Surface Mount | SC-74, SOT-457 | 6-TSOP | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
2.106 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
3.708 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 400V 3A DO201AD |
5.184 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 400V 1A DO41 |
3.456 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 50V 8A TO220A |
249 |
|
- | Standard | 50V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 50V | - | Through Hole | TO-220-2 | TO-220a | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 200V 8A TO220A |
385 |
|
- | Standard | 200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220a | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 400V 8A TO220A |
6.444 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | - | Through Hole | TO-220-2 | TO-220a | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 600V 8A TO220A |
2.988 |
|
- | Standard | 600V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220a | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 100V 1A SMB |
3.526 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |