Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 642/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 600V 2A POWERMITE |
3.096 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 2A POWERMITE |
3.474 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
4.464 |
|
Military, MIL-PRF-19500/286 | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
7.344 |
|
Military, MIL-PRF-19500/429 | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A DO203AB |
2.970 |
|
- | Standard | 1000V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
2.160 |
|
- | Standard | 1200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A DO203AB |
7.938 |
|
- | Standard, Reverse Polarity | 1000V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
7.578 |
|
- | Standard, Reverse Polarity | 1200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 80A DO203AB |
5.724 |
|
- | Standard | 1400V | 80A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 95A DO203AB |
7.830 |
|
- | Standard | 1200V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 95A DO203AB |
4.734 |
|
- | Standard, Reverse Polarity | 1200V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 6A TO220-2L |
3.492 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 35pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
|
|
|
Semtech |
D MET 3A STD 600V HR |
2.412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 35A DO203AB |
5.724 |
|
- | Standard, Reverse Polarity | 400V | 35A | 1.7V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 60A DO203AB |
4.680 |
|
- | Standard, Reverse Polarity | 100V | 60A | 1.3V @ 188A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 50A DO203AB |
6.714 |
|
- | Standard | 1200V | 50A | 1.4V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 50A DO203AB |
8.820 |
|
- | Standard, Reverse Polarity | 1200V | 50A | 1.4V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 300MA AXIAL |
2.934 |
|
Military, MIL-PRF-19500/578 | Standard | 150V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 150V | 2.5pF @ 0V, 1MHz | Through Hole | D, Axial | - | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 20A SIC SBD |
7.416 |
|
- | Silicon Carbide Schottky | 650V | 13A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 95A DO203AB |
2.952 |
|
- | Standard, Reverse Polarity | 1400V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
6.192 |
|
- | Standard, Reverse Polarity | 100V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 80V 1A DO213AB |
5.670 |
|
- | Schottky | 80V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 80V | - | Surface Mount | DO-213AB, MELF | DO-213AB | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
2.736 |
|
Military, MIL-PRF-19500/228 | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
6.858 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 175V 100MA DO7 |
4.194 |
|
- | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
|
Microsemi |
ZENER DIODE |
5.778 |
|
- | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | - | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
5.184 |
|
- | Standard, Reverse Polarity | 400V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 95A DO203AB |
8.298 |
|
- | Standard, Reverse Polarity | 1600V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
192 |
|
Military, MIL-PRF-19500/228 | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 800V 1A AXIAL |
2.160 |
|
- | Standard | 800V | 1A (DC) | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | Axial | Axial | - |