Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 496/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE SCHOTTKY 60V 700MA AXIAL |
2.718 |
|
- | Schottky | 60V | 700mA | 620mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 700MA AXIAL |
7.722 |
|
- | Schottky | 60V | 700mA | 620mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 90V 700MA AXIAL |
3.708 |
|
- | Schottky | 90V | 700mA | 810mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 90V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 90V 700MA AXIAL |
2.124 |
|
- | Schottky | 90V | 700mA | 810mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 90V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 90V 700MA AXIAL |
3.762 |
|
- | Schottky | 90V | 700mA | 810mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 90V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
7.902 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
3.582 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
5.256 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 500MA AXIAL |
3.744 |
|
- | Standard | 1000V | 500mA | 3.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 1.2A AXIAL |
8.874 |
|
- | Standard | 600V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
3.078 |
|
- | Standard | 800V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 1.2A AXIAL |
7.344 |
|
- | Standard | 400V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
6.714 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 5µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
6.030 |
|
- | Avalanche | 800V | 2A | 1.65V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 800V | 16pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A SOD57 |
7.884 |
|
- | Avalanche | 200V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.4A SOD57 |
3.960 |
|
- | Avalanche | 50V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.4A SOD57 |
6.894 |
|
- | Avalanche | 100V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.25A SOD57 |
7.902 |
|
- | Avalanche | 50V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.25A SOD57 |
6.354 |
|
- | Avalanche | 100V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A SOD57 |
5.544 |
|
- | Avalanche | 100V | 1.5A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
2.016 |
|
- | Avalanche | 800V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A SOD57 |
6.750 |
|
- | Avalanche | 400V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
6.804 |
|
- | Avalanche | 800V | 2A | 1.65V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 800V | 16pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A SOD57 |
5.976 |
|
- | Avalanche | 200V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.4A SOD57 |
3.150 |
|
- | Avalanche | 50V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.4A SOD57 |
2.124 |
|
- | Avalanche | 100V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.25A SOD57 |
5.346 |
|
- | Avalanche | 50V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.25A SOD57 |
8.262 |
|
- | Avalanche | 100V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A SOD57 |
3.150 |
|
- | Avalanche | 100V | 1.5A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A SOD57 |
3.852 |
|
- | Avalanche | 200V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |