Raddrizzatori - Singoli

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 402/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
S3DB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	3.636	-	Standard	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3DBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	8.046	Automotive, AEC-Q101	Standard	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3GB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	8.064	-	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3GBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	7.668	Automotive, AEC-Q101	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3JB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	2.898	-	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3JBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	8.784	Automotive, AEC-Q101	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3KB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA	8.820	-	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3KBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA	8.892	Automotive, AEC-Q101	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3MB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AA	3.526	-	Standard	-	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3MBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AA	5.094	Automotive, AEC-Q101	Standard	-	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UF1005-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	4.860	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	-	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
UF1006-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL	5.040	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
UF1005-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	5.364	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 180°C
UF1006-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL	7.272	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 180°C
VSSA36S-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2.4A DO214AC	6.318	TMBS®	Schottky	60V	2.4A	630mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	900µA @ 60V	245pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS3P3HM3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3A DO220AA	4.572	eSMP®	Schottky	30V	3A	580mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	130pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
ES1D-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214AC	8.694	-	Standard	200V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS15-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 1A 50V DO-214AC	5.274	-	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SS16-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 1A 60V DO-214AC	4.446	-	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SS15-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 1A 50V DO-214AC	4.104	-	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
V2F6HM3/I	Vishay Semiconductor Diodes Division	2A,60V,SMF,TRENCH SKY RECT.	4.176	Automotive, AEC-Q101, eSMP®, TMBS®	Schottky	60V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	480µA @ 60V	250pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 150°C
V3FL45HM3/I	Vishay Semiconductor Diodes Division	3A,45V,SMF,TRENCH SKY RECT.	8.892	Automotive, AEC-Q101, eSMP®, TMBS®	Schottky	45V	3A	580mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	750µA @ 45V	370pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 150°C
RB168L-40TE25	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDS	866	-	Schottky	40V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	550nA @ 40V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
BAS40W,115	Nexperia	DIODE SCHOTTKY 40V 120MA SOT323	7.902	-	Schottky	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70	150°C (Max)
SS25S-E3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO214AC	3.762	-	Schottky	50V	2A	750mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1JHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	6.012	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UG1A-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	5.310	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1B-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	5.292	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1C-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO204AL	6.822	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	6.444	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

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