Raddrizzatori - Singoli

Produttore

Ripristina

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 385/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
ES1LD R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8.082	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LG R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	2.268	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LJ R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	4.122	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S3BB	ON Semiconductor	DIODE GP 100V 3A SMB	3.510	Automotive, AEC-Q101	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	18pF @ 0V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3KB	ON Semiconductor	DIODE GP 800V 3A SMB	8.316	Automotive, AEC-Q101	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	18pF @ 0V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
NRVUA160VT3G	ON Semiconductor	DIODE GEN PURP 600V 2A SMA	3.528	Automotive, AEC-Q101	Standard	600V	2A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
RS1MSP1-7	Diodes Incorporated	DIODE GEN PURP 1KV 1A POWRDI 123	3.438	-	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-55°C ~ 150°C
S2K R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	2.124	-	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS1FH6-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO219AB	7.632	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	3µA @ 60V	90pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
SS2FH6-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO219AB	7.326	-	Schottky	60V	2A	780mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3µA @ 60V	90pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
NRVUS2KA	ON Semiconductor	DIODE GPP 1.5A SMA DO-214AC	5.418	*	-	-	-	-	-	-	-	-	-	-	-	-
NRVUS2MA	ON Semiconductor	DIODE GPP 1.5A SMA DO-214AC	7.992	*	-	-	-	-	-	-	-	-	-	-	-	-
ESH1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	7.128	-	Standard	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	4.032	-	Standard	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RF05VA1STR	Rohm Semiconductor	DIODE GEN PURP 100V 500MA TUMD2	4.212	-	Standard	100V	500mA	980mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	-	Surface Mount	SC-90, SOD-323F	TUMD2	150°C (Max)
S1FLK-GS08	Vishay Semiconductor Diodes Division	DIODE GP 800V 700MA DO219AB	6.228	-	Standard	800V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
RS1PB-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO220AA	4.446	eSMP®	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
RS1PJ-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA	6.786	eSMP®	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
CRG03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A SFLAT	5.400	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
PMEG2005AEAF	Nexperia	DIODE SCHOTTKY 20V 500MA SOD323	6.912	-	Schottky	20V	500mA (DC)	390mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	66pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
PMEG3005EJF	Nexperia	DIODE SCHOTTKY 30V 500MA SC90	7.614	-	Schottky	30V	500mA (DC)	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 30V	55pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SC-90	150°C (Max)
MPG06AHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A MPG06	6.678	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06BHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A MPG06	2.484	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06GHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06	7.308	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06JHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A MPG06	4.518	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06KHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A MPG06	2.610	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06MHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A MPG06	6.192	-	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06DHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A MPG06	8.046	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
V2F6-M3/I	Vishay Semiconductor Diodes Division	2A,60V,SMF,TRENCH SKY RECT.	6.858	eSMP®, TMBS®	Schottky	60V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	480µA @ 60V	250pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 150°C
V3FL45-M3/I	Vishay Semiconductor Diodes Division	3A,45V,SMF,TRENCH SKY RECT.	7.308	eSMP®, TMBS®	Schottky	45V	3A	580mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	750µA @ 45V	370pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 150°C

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