Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 376/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO219AB |
6.066 |
|
Automotive, AEC-Q101 | Standard | 200V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 200V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO219AB |
2.988 |
|
Automotive, AEC-Q101 | Standard | 400V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 400V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO219AB |
3.330 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 600V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 40V 2A DO41 |
6.858 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 80V 2A DO41 |
4.500 |
|
- | Schottky | 80V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | 170pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE SBR 40V 3A SMA |
2.934 |
|
SBR® | Super Barrier | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
3.834 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
3.438 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
8.910 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8.370 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
6.966 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
2.664 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
2.142 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
2.664 |
|
- | Standard | 100V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
6.012 |
|
- | Standard | 200V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
2.448 |
|
- | Standard | 600V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
3.366 |
|
- | Standard | 800V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 500MA SOD923 |
3.564 |
|
- | Schottky | 20V | 500mA (DC) | 520mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 9µA @ 20V | - | - | - | - | -55°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 600MA SOD923 |
4.266 |
|
- | Schottky | 30V | 600mA (DC) | 620mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | - | - | - | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
8.568 |
|
- | Standard | 200V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO214AC |
7.542 |
|
- | Standard | 400V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
5.202 |
|
- | Standard | 600V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A DO214AC |
6.750 |
|
- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A DO214AC |
4.572 |
|
- | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A DO214AC |
3.906 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A DO214AC |
3.744 |
|
- | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A DO214AC |
8.838 |
|
- | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A SUB SMA |
2.988 |
|
Automotive, AEC-Q101 | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 50V 3A DO201AD |
3.258 |
|
- | Standard | 50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | -65°C ~ 125°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 200V 3A DO201AD |
3.564 |
|
- | Standard | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | -65°C ~ 125°C |