Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 368/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A DO204AC |
8.136 |
|
- | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 2A DO204AC |
4.860 |
|
- | Schottky | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
2.592 |
|
- | Standard | 200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
6.732 |
|
Automotive, AEC-Q101 | Standard | 200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SUB SMA |
5.760 |
|
- | Schottky | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SUB SMA |
6.516 |
|
- | Schottky | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A SUB SMA |
3.852 |
|
- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A SUB SMA |
5.292 |
|
Automotive, AEC-Q101 | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A SUB SMA |
8.874 |
|
- | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A SUB SMA |
2.898 |
|
Automotive, AEC-Q101 | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A SUB SMA |
5.922 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A SUB SMA |
2.988 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A SUB SMA |
3.384 |
|
- | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A SUB SMA |
2.232 |
|
Automotive, AEC-Q101 | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A SUB SMA |
4.392 |
|
- | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A SUB SMA |
4.446 |
|
Automotive, AEC-Q101 | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |
4.842 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 130pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
8.172 |
|
eSMP® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 100V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
7.596 |
|
eSMP® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 200V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
5.382 |
|
eSMP® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 400V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
5.976 |
|
eSMP® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 600V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO220AA |
4.482 |
|
eSMP® | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 800V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO220AA |
4.662 |
|
eSMP® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 1000V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO214AC |
7.722 |
|
- | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO204AL |
4.374 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL |
5.400 |
|
Automotive, AEC-Q101 | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO204AC |
8.046 |
|
- | Standard | 50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 40pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A DO204AC |
6.642 |
|
Automotive, AEC-Q101 | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A TS-1 |
8.460 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A TS-1 |
7.848 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |