Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 244/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A TO220AC |
6.360 |
|
Automotive, AEC-Q101, ECOPACK® | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 725pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
IXYS |
DIODE GP 1.2KV 60A ISOPLUS247 |
13 |
|
HiPerFRED™ | Standard | 1200V | 60A | 2.66V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 650µA @ 1200V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 1A AXIAL |
6.390 |
|
- | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 70A DO203AB |
54 |
|
- | Standard, Reverse Polarity | 1200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 70A DO203AB |
7.452 |
|
- | Standard | 100V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA D5D |
6.030 |
|
- | Standard | 75V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
|
|
IXYS |
DIODE AVALANCHE 1.6KV 25A DO203 |
6.132 |
|
- | Avalanche | 1600V | 25A | 1.36V @ 55A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 20A TO247AC |
6.432 |
|
- | Silicon Carbide Schottky | 1200V | 20A | 2V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 968pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A D-55 |
6.456 |
|
- | Standard | 100V | 40A | - | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 100V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 150A DO205 |
7.956 |
|
- | Standard | 1200V | 150A | 1.47V @ 600A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 150A DO205 |
4.698 |
|
- | Standard | 1000V | 150A | 1.47V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1000V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 150A DO205 |
4.536 |
|
- | Standard, Reverse Polarity | 1000V | 150A | 1.47V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1000V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
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|
Microsemi |
DIODE GEN PURP 150V 6A AXIAL |
79 |
|
- | Standard | 150V | 6A | 925mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | B, Axial | - | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 100V 6A AXIAL |
7.902 |
|
- | Standard | 100V | 6A | 925mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | Axial | Axial | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 30V 120A PRM1-1 |
7.776 |
|
- | Schottky | 30V | 120A | 490mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | 7400pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 150A DO205AA |
6.822 |
|
- | Standard | 600V | 150A | 1.33V @ 471A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 600V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 1.2KV 100A ADD-A-PAK |
7.290 |
|
- | Standard | 1200V | 100A | 1.55V @ 314A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1200V | - | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK® | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 240A HALFPAK |
5.022 |
|
- | Schottky | 150V | 240A | 1.21V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 150V | 6000pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | HALF-PAK | -55°C ~ 175°C |
|
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|
GeneSiC Semiconductor |
SIC DIODE 1700V 25A TO-247-2 |
6.768 |
|
- | Silicon Carbide Schottky | 1700V | 110A (DC) | 1.8V @ 25A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 1700V | 1596pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 300A DO205AB |
230 |
|
- | Standard | 400V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 400V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 200A D-67 |
6.822 |
|
- | Schottky, Reverse Polarity | 45V | 200A | 700mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 400A DO205 |
6.066 |
|
- | Standard | 1200V | 400A | 1.62V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1200V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 400A DO205 |
7.758 |
|
- | Standard, Reverse Polarity | 1200V | 400A | 1.62V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1200V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2.4KV 400A DO205 |
6.498 |
|
- | Standard | 2400V | 400A | 1.62V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 2400V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 190°C |
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|
ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
56.982 |
|
- | Standard | 100V | 200mA | 1V @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
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|
Micro Commercial Co |
DIODE GEN PURP 100V 6A R6 |
10.836 |
|
- | Standard | 100V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AA |
17.652 |
|
- | Schottky | 90V | 1.5A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 100V 6A R6 |
12.948 |
|
- | Standard | 100V | 6A | 1.2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | 140pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
16.872 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
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ON Semiconductor |
DIODE GEN PURP 50V 1A AXIAL |
8.568 |
|
SWITCHMODE™ | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |