Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1164/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY SMA |
8.010 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V |
7.416 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V |
2.304 |
|
- | Schottky | 150V | 5A (DC) | 880mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 150V | - | Surface Mount | Die | Die | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V |
4.536 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V |
2.268 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V TO220AC |
6.570 |
|
- | Standard | 150V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V TO220AC |
4.482 |
|
- | Standard | 50V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 10A 200V DPAK |
5.292 |
|
- | Standard | 200V | 10A | 950mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 62pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 10A 200V DPAK |
5.580 |
|
- | Standard | 200V | 10A | 950mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 62pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 10A 400V DPAK |
7.254 |
|
- | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 62pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 10A 400V DPAK |
4.212 |
|
- | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 62pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 10A 600V DPAK |
6.858 |
|
- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 62pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
Central Semiconductor Corp |
SWITCHING DIODE |
3.222 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Central Semiconductor Corp |
SWITCHING DIODE |
4.878 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Central Semiconductor Corp |
SWITCHING DIODE |
3.204 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Central Semiconductor Corp |
SWITCHING DIODE |
7.614 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
STMicroelectronics |
DIODE SCHOTTKY 200V DPAK |
3.526 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
STMicroelectronics |
DIODE SCHOTTKY 80V DPAK |
7.470 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
DIODE ULT FAST SOT23 |
7.794 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
DIODE ULT FAST SOT23 |
3.294 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
DIODE ULT FAST SOT23 |
8.514 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2 |
2.826 |
|
- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.3pF @ 0V, 1MHz | Surface Mount | 0201 (0603 Metric) | SC2 | 125°C (Max) |
|
|
NXP |
DIODE GEN PURP 500V 8A TO220AC |
5.112 |
|
- | Standard | 500V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 400µA @ 500V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
NXP |
DIODE GEN PURP 150V 8A TO220F |
6.138 |
|
- | Standard | 150V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 400µA @ 150V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
NXP |
DIODE GEN PURP 500V 8A TO220F |
5.796 |
|
- | Standard | 500V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 400µA @ 500V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
NXP |
DIODE GEN PURP 600V 8A TO220F |
6.930 |
|
- | Standard | 600V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 400µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
NXP |
DIODE SCHOTTKY 30V 200MA SMT3 |
6.570 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 125°C (Max) |
|
|
NXP |
DIODE SCHOTTKY 20V 1A SMT3 |
5.202 |
|
- | Schottky | 20V | 1A (DC) | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 70pF @ 5V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 150°C (Max) |
|
|
NXP |
DIODE GEN PURP 1.5KV 6A TO220F |
6.732 |
|
- | Standard | 1500V | 6A (DC) | 1.6V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 250µA @ 1300V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
NXP |
DIODE GEN PURP 1.5KV 7A TO220F |
3.580 |
|
- | Standard | 1500V | 7A (DC) | 2V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | 100µA @ 1300V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |