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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1164/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SS24-7002E3/5BT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY SMA
8.010
-
Schottky
40V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SX079S045S6PU
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V
7.416
-
-
-
-
-
-
-
-
-
-
-
-
-
SX081H150A6OU
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 150V
2.304
-
Schottky
150V
5A (DC)
880mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 150V
-
Surface Mount
Die
Die
-65°C ~ 175°C
SX110S040A6OB-01
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V
4.536
-
-
-
-
-
-
-
-
-
-
-
-
-
SX110S040S6OU
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V
2.268
-
-
-
-
-
-
-
-
-
-
-
-
-
BYWE29-150-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V TO220AC
6.570
-
Standard
150V
8A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 150V
45pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
BYWE29-50-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V TO220AC
4.482
-
Standard
50V
8A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 50V
45pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
CUD10-02 BK
Central Semiconductor Corp
DIODE GEN PURP 10A 200V DPAK
5.292
-
Standard
200V
10A
950mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-02 TR13
Central Semiconductor Corp
DIODE GEN PURP 10A 200V DPAK
5.580
-
Standard
200V
10A
950mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-04 BK
Central Semiconductor Corp
DIODE GEN PURP 10A 400V DPAK
7.254
-
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-04 TR13
Central Semiconductor Corp
DIODE GEN PURP 10A 400V DPAK
4.212
-
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-06 BK
Central Semiconductor Corp
DIODE GEN PURP 10A 600V DPAK
6.858
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CPD93V-1N3600-CT
Central Semiconductor Corp
SWITCHING DIODE
3.222
*
-
-
-
-
-
-
-
-
-
-
-
-
CPD93V-1N3600-WN
Central Semiconductor Corp
SWITCHING DIODE
4.878
*
-
-
-
-
-
-
-
-
-
-
-
-
CPD93V-1N4150-CT
Central Semiconductor Corp
SWITCHING DIODE
3.204
*
-
-
-
-
-
-
-
-
-
-
-
-
CPD93V-1N4150-WN
Central Semiconductor Corp
SWITCHING DIODE
7.614
*
-
-
-
-
-
-
-
-
-
-
-
-
STPS20LCD200CBTR
STMicroelectronics
DIODE SCHOTTKY 200V DPAK
3.526
*
-
-
-
-
-
-
-
-
-
-
-
-
STPS20LCD80CB-TR
STMicroelectronics
DIODE SCHOTTKY 80V DPAK
7.470
*
-
-
-
-
-
-
-
-
-
-
-
-
1H85-MMBD3070
ON Semiconductor
DIODE ULT FAST SOT23
7.794
*
-
-
-
-
-
-
-
-
-
-
-
-
1P85-D1P001D
ON Semiconductor
DIODE ULT FAST SOT23
3.294
*
-
-
-
-
-
-
-
-
-
-
-
-
1P85-MMBD4148
ON Semiconductor
DIODE ULT FAST SOT23
8.514
*
-
-
-
-
-
-
-
-
-
-
-
-
DSF01S30SC,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 100MA SC2
2.826
-
Schottky
30V
100mA
500mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
50µA @ 30V
9.3pF @ 0V, 1MHz
Surface Mount
0201 (0603 Metric)
SC2
125°C (Max)
BY229-600,127
NXP
DIODE GEN PURP 500V 8A TO220AC
5.112
-
Standard
500V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 500V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY229X-200,127
NXP
DIODE GEN PURP 150V 8A TO220F
6.138
-
Standard
150V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 150V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY229X-600,127
NXP
DIODE GEN PURP 500V 8A TO220F
5.796
-
Standard
500V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 500V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY229X-800,127
NXP
DIODE GEN PURP 600V 8A TO220F
6.930
-
Standard
600V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 600V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
1PS59SB10,115
NXP
DIODE SCHOTTKY 30V 200MA SMT3
6.570
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
125°C (Max)
PMEG2010AEK,115
NXP
DIODE SCHOTTKY 20V 1A SMT3
5.202
-
Schottky
20V
1A (DC)
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
70pF @ 5V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
150°C (Max)
BY329X-1500S,127
NXP
DIODE GEN PURP 1.5KV 6A TO220F
6.732
-
Standard
1500V
6A (DC)
1.6V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
250µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY359X-1500S,127
NXP
DIODE GEN PURP 1.5KV 7A TO220F
3.580
-
Standard
1500V
7A (DC)
2V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
100µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)