Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1099/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 20A ITO220AB |
5.634 |
|
Automotive, AEC-Q101 | Standard | 100V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A ITO220AB |
3.780 |
|
- | Standard | 150V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A ITO220AB |
2.340 |
|
Automotive, AEC-Q101 | Standard | 150V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A ITO220AB |
8.388 |
|
Automotive, AEC-Q101 | Standard | 200V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A ITO220AB |
3.472 |
|
Automotive, AEC-Q101 | Standard | 300V | 20A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A ITO220AB |
3.420 |
|
- | Standard | 500V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A ITO220AB |
2.376 |
|
Automotive, AEC-Q101 | Standard | 500V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A ITO220AB |
2.376 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 5A ITO220AB |
2.988 |
|
- | Standard | 50V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 5A ITO220AB |
7.164 |
|
Automotive, AEC-Q101 | Standard | 50V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 5A ITO220AB |
7.200 |
|
Automotive, AEC-Q101 | Standard | 100V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 5A ITO220AB |
2.430 |
|
- | Standard | 150V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 5A ITO220AB |
6.084 |
|
Automotive, AEC-Q101 | Standard | 150V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A ITO220AB |
7.218 |
|
Automotive, AEC-Q101 | Standard | 200V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 5A ITO220AB |
5.454 |
|
Automotive, AEC-Q101 | Standard | 300V | 5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A ITO220AB |
6.408 |
|
- | Standard | 400V | 5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A ITO220AB |
5.850 |
|
Automotive, AEC-Q101 | Standard | 400V | 5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 5A ITO220AB |
7.992 |
|
- | Standard | 500V | 5A | 1.7V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 5A ITO220AB |
5.418 |
|
Automotive, AEC-Q101 | Standard | 500V | 5A | 1.7V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A ITO220AB |
3.996 |
|
- | Standard | 600V | 5A | 1.7V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A ITO220AB |
5.778 |
|
Automotive, AEC-Q101 | Standard | 600V | 5A | 1.7V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 10A TO220AB |
3.168 |
|
- | Schottky | 20V | 10A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 10A TO220AB |
2.790 |
|
Automotive, AEC-Q101 | Schottky | 20V | 10A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 10A TO220AB |
3.564 |
|
- | Schottky | 30V | 10A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 10A TO220AB |
8.478 |
|
Automotive, AEC-Q101 | Schottky | 30V | 10A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 10A TO220AB |
3.942 |
|
- | Schottky | 50V | 10A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 10A TO220AB |
4.248 |
|
Automotive, AEC-Q101 | Schottky | 50V | 10A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AB |
8.568 |
|
Automotive, AEC-Q101 | Schottky | 60V | 10A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 10A TO220AB |
6.732 |
|
- | Schottky | 90V | 10A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 10A TO220AB |
6.516 |
|
Automotive, AEC-Q101 | Schottky | 90V | 10A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |