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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1055/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
ES3J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
3.436
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3JHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
6.984
Automotive, AEC-Q101
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ESH3B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
5.832
-
Standard
100V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3C M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6.966
-
Standard
150V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
7.596
-
Standard
200V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
HS3A M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7.452
-
Standard
50V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8.838
-
Standard
100V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
5.454
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3F M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
5.436
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3G M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
7.272
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
4.500
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3K M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
5.742
-
Standard
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3M M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
4.356
-
Standard
-
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5A M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
5.436
-
Standard
50V
5A
1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A DO214AB
4.572
-
Standard
100V
5A
1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
7.866
-
Standard
200V
5A
1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5F M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 5A DO214AB
5.112
-
Standard
300V
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5G M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AB
3.508
-
Standard
400V
5A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO214AB
4.230
-
Standard
600V
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5K M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
3.402
-
Standard
800V
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5M M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 5A DO214AB
3.978
-
Standard
-
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR305S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
4.374
-
Standard
50V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR305SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7.452
Automotive, AEC-Q101
Standard
50V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR310S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8.244
-
Standard
100V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR310SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
2.934
Automotive, AEC-Q101
Standard
100V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR315S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
7.668
-
Standard
150V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR315SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
8.352
Automotive, AEC-Q101
Standard
150V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR320S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
3.060
-
Standard
200V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR320SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4.698
Automotive, AEC-Q101
Standard
200V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR340SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
7.272
Automotive, AEC-Q101
Standard
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C