Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1037/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE GEN PURP 800V 1.5A DO41 |
5.850 |
|
- | Standard | 800V | 1.5A | 1.7V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A WAFER |
7.884 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A WAFER |
7.344 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 1A R-1 |
2.934 |
|
- | Standard | 1000V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | R-1, Axial | R-1 | -65°C ~ 125°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 3A DO201AD |
4.770 |
|
- | Standard | 1000V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 30pF @ 0V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 2A DO15 |
4.878 |
|
- | Standard | 1000V | 2A | 1.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 30pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 8A TO220AC |
4.320 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 20A TO220AC |
2.088 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 600pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2 |
5.184 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
2.214 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
6.480 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
5.148 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
7.182 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
7.524 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
3.078 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1.2KV 500MA DO214 |
2.988 |
|
- | Standard | 1200V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMAE) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1.5KV 500MA DO214 |
7.884 |
|
- | Standard | 1500V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1500V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMAE) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1.8KV 500MA DO214 |
2.250 |
|
- | Standard | 1800V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMAE) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 4A TO252 |
5.634 |
|
- | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 175°C |
|
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 45V 100MA ESC |
7.038 |
|
- | Schottky | 45V | 100mA | 600mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10V | 18pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | -40°C ~ 100°C |
|
|
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STMicroelectronics |
DIODE SCHOTTKY 20V 2FLIPCHIP |
3.924 |
|
ECOPACK® | Schottky | 20V | - | 560mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 6µA @ 20V | - | Surface Mount | 2-XFBGA, FCBGA | 2-FlipChip | -30°C ~ 85°C |
|
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STMicroelectronics |
DIODE GEN PURP 600V 30A TO-3P |
5.058 |
|
ECOPACK® | Standard | 600V | 30A | 1.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 20µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 175°C (Max) |
|
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO252-3 |
7.218 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3 |
7.722 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 10A DO214AB |
8.910 |
|
- | Standard | 50V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 100V 10A DO214AB |
4.176 |
|
- | Standard | 100V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 200V 10A DO214AB |
8.838 |
|
- | Standard | 200V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 10A DO214AB |
2.448 |
|
- | Standard | 600V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 800V 10A DO214AB |
2.664 |
|
- | Standard | 800V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 1A DO214AA |
2.100 |
|
- | Standard | 50V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |