Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1017/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
6.570 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
4.734 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER |
4.482 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 20V 50MA DIE |
8.118 |
|
- | Standard | 20V | 50mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 600ns | 5pA @ 5V | 1.3pF @ 0V, 1MHz | Surface Mount | Die | Die | -65°C ~ 125°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 1A DO41 |
8.208 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
8.910 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
4.878 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
7.002 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
7.920 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 800V 1A DO41 |
7.650 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A DO41 |
4.266 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 1A DO41 |
3.996 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 1A DO41 |
7.110 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 1A DO41 |
5.580 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 1A DO41 |
8.226 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
8.262 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
3.526 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
4.716 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
4.284 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 800V 1A DO41 |
6.732 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A DO41 |
7.974 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 20V 1A SOD123HE |
6.678 |
|
- | Schottky | 20V | 1A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 30V 1A SOD123HE |
6.534 |
|
- | Schottky | 30V | 1A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 50V 1A SOD123HE |
6.714 |
|
- | Schottky | 50V | 1A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 80V 1A SOD123HE |
3.546 |
|
- | Schottky | 80V | 1A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 180°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 20V 2A SOD123HE |
2.718 |
|
- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 30V 2A SOD123HE |
8.280 |
|
- | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 50V 2A SOD123HE |
3.510 |
|
- | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 80V 2A SOD123HE |
2.808 |
|
- | Schottky | 80V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 50V 3A SOD123HE |
6.930 |
|
* | Schottky | 50V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |