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Raddrizzatori a ponte

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori a ponte
Record 5.469
Pagina 62/183
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tecnologia
Tensione - Picco inverso (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Corrente - Perdita inversa @ Vr
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
GBU1504TB
SMC Diode Solutions
BRIDGE RECT 1PHASE 400V 15A GBU
7.812
-
Single Phase
Standard
400V
15A
1.1V @ 15A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
GBU1508TB
SMC Diode Solutions
BRIDGE RECT 1PHASE 800V 15A GBU
5.364
-
Single Phase
Standard
800V
15A
1.1V @ 15A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
G2SB60-E3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 600V 1.5A GBL
2.034
-
Single Phase
Standard
600V
1.5A
1V @ 750mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
G2SB80-E3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 800V 1.5A GBL
4.950
-
Single Phase
Standard
800V
1.5A
1V @ 750mA
50µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBU4D
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 200V 4A GBU
143
-
Single Phase
Standard
200V
4A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4J
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 600V 4A GBU
1.504
-
Single Phase
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4K
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 800V 4A GBU
22.266
-
Single Phase
Standard
800V
4A
1.1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4M
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 4A GBU
2.672
-
Single Phase
Standard
1kV
4A
1.1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU607HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 6A GBU
2.250
Automotive, AEC-Q101
Single Phase
Standard
1kV
6A
1.1V @ 6A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBLA005-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 50V 3A GBL
2.304
-
Single Phase
Standard
50V
3A
1.1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBLA01-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 100V 3A GBL
5.508
-
Single Phase
Standard
100V
3A
1.1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBLA02-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 200V 3A GBL
5.778
-
Single Phase
Avalanche
200V
3A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBLA04-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 400V 3A GBL
4.122
-
Single Phase
Standard
400V
3A
1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBLA06-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 600V 3A GBL
2.110
-
Single Phase
Standard
600V
3A
1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBLA08-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 800V 3A GBL
4.788
-
Single Phase
Standard
800V
3A
1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBLA10-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 1KV 3A GBL
2.808
-
Single Phase
Standard
1kV
3A
1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBU806HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 800V 8A GBU
5.652
Automotive, AEC-Q101
Single Phase
Standard
800V
8A
1.1V @ 8A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU807HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 8A GBU
8.730
Automotive, AEC-Q101
Single Phase
Standard
1kV
8A
1.1V @ 8A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
TS6P07G D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 6A TS-6P
8.010
-
Single Phase
Standard
1kV
6A
1.1V @ 6A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBU8KS
ON Semiconductor
BRIDGE RECT 1PHASE 800V 8A GBU
6.930
-
Single Phase
Standard
800V
8A
1V @ 8A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU801 D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 8A GBU
3.834
-
Single Phase
Standard
50V
8A
1.1V @ 8A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU802 D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 100V 8A GBU
7.722
-
Single Phase
Standard
100V
8A
1.1V @ 8A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU803 D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 200V 8A GBU
8.622
-
Single Phase
Standard
200V
8A
1.1V @ 8A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU804 D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 400V 8A GBU
3.618
-
Single Phase
Standard
400V
8A
1.1V @ 8A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6A
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 50V 6A GBU
142
-
Single Phase
Standard
50V
6A
1.1V @ 6A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6D
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 200V 6A GBU
178
-
Single Phase
Standard
200V
6A
1.1V @ 6A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6G
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 400V 6A GBU
5.201
-
Single Phase
Standard
400V
6A
1.1V @ 6A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6K
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 800V 6A GBU
15.707
-
Single Phase
Standard
800V
6A
1.1V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6M
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 6A GBU
14.855
-
Single Phase
Standard
1kV
6A
1.1V @ 6A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBJ4005G
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 50V 4A KBJ
1.296
-
Single Phase
Standard
50V
4A
1.1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ