Renesas Electronics America Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreRenesas Electronics America
Record 485
Pagina 11/17
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH 500V 12A TO220 |
7.938 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 700mOhm @ 6A, 10V | - | 27.8nC @ 10V | ±30V | 1050pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 500V 19A TO3P |
8.280 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Ta) | 10V | 400mOhm @ 9.5A, 10V | - | 43nC @ 10V | ±30V | 1700pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 500V 38A TO3P |
2.790 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 38A (Ta) | 10V | 135mOhm @ 19A, 10V | - | 140nC @ 10V | ±30V | 4750pF @ 25V | - | 200W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 600V 10A LDPAK |
8.514 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 1.1Ohm @ 5A, 10V | - | 28nC @ 10V | ±30V | 1050pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 600V 11A LDPAK |
5.886 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Ta) | 10V | 810mOhm @ 5.5A, 10V | - | 38nC @ 10V | ±30V | 1400pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 600V 27A TO3P |
7.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Ta) | 10V | 265mOhm @ 13.5A, 10V | - | 98nC @ 10V | ±30V | 3830pF @ 25V | - | 200W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 600V 30A TO3P |
3.924 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Ta) | 10V | 210mOhm @ 15A, 10V | - | 130nC @ 10V | ±30V | 4750pF @ 25V | - | 200W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET P-CH 30V 16A 8SOP |
2.340 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 5mOhm @ 16A, 10V | - | 195nC @ 10V | ±20V | 6250pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-PowerSOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 14A 8SOP |
4.662 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 7mOhm @ 14A, 10V | - | 80nC @ 10V | ±20V | 3400pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-PowerSOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 10A 8SOP |
5.832 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 15mOhm @ 10A, 10V | - | 37nC @ 10V | ±20V | 1450pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-PowerSOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON |
3.744 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | - | 100nC @ 10V | ±20V | 3740pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 27A 8HVSON |
7.506 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 6.2mOhm @ 27A, 10V | - | 80nC @ 10V | ±20V | 3130pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 26A 8HVSON |
6.606 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Tc) | 4.5V, 10V | 3.8mOhm @ 26A, 10V | - | 51nC @ 10V | ±20V | 2490pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 3.3A 3MPAK |
8.856 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.3A (Ta) | 4.5V, 10V | 68mOhm @ 1.6A, 10V | - | 12nC @ 10V | +10V, -20V | 625pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | 3-MPAK | TO-236-3, SC-59, SOT-23-3 |
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Renesas Electronics America |
MOSFET P-CH 30V 85A 8-SON |
6.642 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 85A (Ta) | 4.5V, 10V | 5.7mOhm @ 23A, 4.5V | - | 153nC @ 10V | ±20V | 6050pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HVSON (5.4x5.15) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 100A 8SON |
3.294 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 2.9mOhm @ 32A, 4.5V | - | 152nC @ 10V | ±20V | 6550pF @ 10V | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 8-HVSON (5.4x5.15) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 130A 8SON |
7.632 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 130A (Ta) | 4.5V, 10V | 2.45mOhm @ 35A, 4.5V | - | 180nC @ 10V | ±20V | 7930pF @ 10V | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 8-HVSON (5.4x5.15) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 130A 8SON |
5.022 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 130A (Ta) | 4.5V, 10V | 1.82mOhm @ 39A, 4.5V | - | 257nC @ 10V | ±20V | 10850pF @ 10V | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 8-HVSON (5.4x5.15) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 500V 20A TO3P |
4.374 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Ta) | 10V | 270mOhm @ 10A, 10V | - | - | ±30V | 3050pF @ 10V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO220AB |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4V, 10V | 7.3mOhm @ 40A, 10V | - | 50nC @ 10V | ±20V | 2800pF @ 10V | - | 1.5W (Ta), 84W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO220AB |
8.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4V, 10V | 7.3mOhm @ 40A, 10V | - | 50nC @ 10V | ±20V | 2800pF @ 10V | - | 1.5W (Ta), 84W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 83A TO220AB |
6.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 83A (Tc) | 4V, 10V | 5.6mOhm @ 42A, 10V | - | 110nC @ 10V | ±20V | 6100pF @ 10V | - | 1.5W (Ta), 100W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 83A TO220AB |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 83A (Tc) | 4V, 10V | 5.6mOhm @ 42A, 10V | - | 110nC @ 10V | ±20V | 6100pF @ 10V | - | 1.5W (Ta), 100W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 100V LDPAK |
4.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Ta) | 4.5V, 10V | 10mOhm @ 37.5A, 10V | - | 155nC @ 10V | ±20V | 9700pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 100V LDPAK |
2.754 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Ta) | 4.5V, 10V | 10mOhm @ 37.5A, 10V | - | 155nC @ 10V | ±20V | 9700pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 8SO |
3.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 900mA (Ta) | 4V, 10V | 3Ohm @ 450mA, 10V | - | 20nC @ 10V | ±20V | 460pF @ 25V | - | 2.5W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH WPAK |
3.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Ta) | 10V | 94mOhm @ 8.5A, 10V | - | 26nC @ 10V | ±30V | 1200pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH WPAK |
6.534 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Ta) | 10V | 110mOhm @ 7A, 10V | - | 15nC @ 10V | ±30V | 710pF @ 25V | - | 25W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 40V 100A |
6.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3.3mOhm @ 45A, 10V | 4V @ 250µA | 102nC @ 10V | ±20V | 5850pF @ 25V | - | 1.8W (Ta), 147W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 30V 20A 8-SOP |
4.572 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 3.8mOhm @ 10A, 10V | - | 25nC @ 4.5V | ±20V | 3850pF @ 10V | - | 2.5W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |