ON Semiconductor Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreON Semiconductor
Record 2.271
Pagina 68/76
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
DIODE GP 250V 25A MICRODE BUTTON |
7.308 |
|
- | Standard | 250V | 25A | 1.18V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 250V | - | Surface Mount | Microde Button | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP 250V 32A MICRODE BUTTON |
6.624 |
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- | Standard | 250V | 32A | 1.15V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 250V | - | Surface Mount | Microde Button | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
4.824 |
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- | Standard | 50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 800V 3A DO201AD |
6.102 |
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- | Standard | 800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 1A AXIAL |
3.420 |
|
- | Schottky | 100V | 1A | 790mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 50V 1A AXIAL |
2.898 |
|
- | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 1A AXIAL |
5.904 |
|
- | Schottky | 60V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 3A DO201AD |
7.866 |
|
- | Schottky | 60V | 3A | 740mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 60V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 10A D2PAK |
5.832 |
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SWITCHMODE™ | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 3A DPAK |
8.442 |
|
SWITCHMODE™ | Schottky | 30V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
4.410 |
|
SWITCHMODE™ | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
4.050 |
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SWITCHMODE™ | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL |
4.230 |
|
SWITCHMODE™ | Standard | 200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 1A AXIAL |
8.532 |
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SWITCHMODE™ | Standard | 600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 4A DO201AD |
4.230 |
|
SWITCHMODE™ | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 70V 200MA DO35 |
5.904 |
|
- | Standard | 70V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 60V | 8pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
5.670 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
5.850 |
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- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
6.822 |
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- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 1A DO41 |
4.014 |
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- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 800V 1A DO41 |
2.754 |
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- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 50V 200MA DO35 |
5.922 |
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- | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
27.706 |
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- | Standard | 50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A DO201AD |
8.622 |
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- | Standard | 100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
65.265 |
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- | Standard | 200V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
2.880 |
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- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 10A TO220F |
4.230 |
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- | Standard | 600V | 10A | 2.5V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 1mA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 6A DPAK |
2.394 |
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- | Standard | 200V | 6A | 1.15V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 4A TO220-2L |
2.232 |
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Stealth™ | Standard | 600V | 4A | 2.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 4A TO220F |
5.850 |
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Stealth™ | Standard | 600V | 4A | 2.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |