Microsemi Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreMicrosemi Corporation
Record 611
Pagina 1/21
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Microsemi |
MOSFET N-CH 1200V 8A TO247 |
21.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 8A (Tc) | 10V | 2.5Ohm @ 3A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2565pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 60A TO-247 |
7.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | ±30V | 7200pF @ 25V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 52A SOT-227 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 52A (Tc) | 15V | 90mOhm @ 26A, 12V | 4V @ 2.5mA | - | ±30V | 9000pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 14A TO247 |
7.020 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 1.4Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 4765pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 12A TO-247 |
6.024 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | 5V @ 1mA | 71nC @ 10V | ±30V | 1969pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 8A TO-247 |
6.684 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 1.8Ohm @ 4A, 10V | 5V @ 1mA | 60nC @ 10V | ±30V | 1885pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 3.5A TO-247 |
9.228 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31nC @ 10V | ±30V | 715pF @ 25V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 37A TO-264 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 77A SOT-227 |
6.384 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640nC @ 10V | ±20V | 13600pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 145A SP6 |
5.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 145A (Tc) | 10V | 78mOhm @ 72.5A, 10V | 5V @ 20mA | 1068nC @ 10V | ±30V | 28500pF @ 25V | - | 3250W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi |
MOSFET N-CH 100V 860A SP6 |
177 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 860A (Tc) | 10V | 1.6mOhm @ 275A, 10V | 4V @ 12mA | 2100nC @ 10V | ±30V | 60000pF @ 25V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi |
MOSFET N-CH 1200V 143A ISOTOP |
7.110 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 143A (Tc) | 20V | 17mOhm @ 100A, 20V | 2.3V @ 2mA | 360nC @ 20V | +25V, -10V | 5960pF @ 1000V | - | 600W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A SOT-227 |
8.460 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 42A TO-247 |
5.850 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 42A (Tc) | 10V | 130mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | ±30V | 6810pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 47A D3PAK |
6.708 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260nC @ 10V | ±20V | 7015pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 38A TO-247 |
7.812 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | ±20V | 2826pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 22A TO-247 |
5.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 500mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4595pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 56A TO-264 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 56A TO-247 |
4.392 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 300V 48A TO-247 |
8.694 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 5870pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 46A TO-264 |
8.946 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | ±30V | 4360pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 58A SOT-227 |
8.802 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A TO-264 |
6.012 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 58A SOT-227 |
7.344 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 58A (Tc) | 10V | 75mOhm @ 29A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | 8930pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 41A SOT-227 |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 42A (Tc) | 10V | 210mOhm @ 33A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V | 18500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 88A SOT-227 |
6.912 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270nC @ 10V | ±30V | 12000pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 37A SOT-227 |
8.910 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395nC @ 10V | ±30V | 9750pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 53A TO-247 |
8.928 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 154nC @ 10V | ±20V | 4020pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 34A T-MAX |
5.886 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | ±20V | 4510pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 34A TO-247 |
6.678 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | ±30V | 6640pF @ 25V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |