Microsemi Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 7/86
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 200V 45A TO247 |
3.436 |
|
- | Schottky | 200V | 45A | 850mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 500µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6.948 |
|
- | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 60A TO247 |
5.670 |
|
- | Standard | 1000V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 280ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A B-MELF |
8.136 |
|
- | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 2.5A DO216 |
2.520 |
|
- | Standard | 150V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | - | Surface Mount | DO-216AA | DO-216 | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 15A TO220 |
8.694 |
|
- | Standard | 600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 15A TO247 |
5.616 |
|
- | Standard | 1000V | 15A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 30A TO247 |
4.860 |
|
- | Standard | 200V | 30A | 1.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 250µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 60A TO247 |
3.258 |
|
- | Standard | 1200V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 75A TO247 |
3.418 |
|
- | Standard | 1200V | 75A | 3.1V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 325ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
203 |
|
- | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
4.824 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
5.526 |
|
- | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
145 |
|
- | Standard | 200V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA D5B |
7.362 |
|
- | Standard | 50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 50nA @ 50V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
3.294 |
|
- | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
7.650 |
|
- | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 1A D5A |
4.392 |
|
- | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 180V 200MA DO213 |
8.316 |
|
- | Standard | 180V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 180V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
3.042 |
|
- | Standard | 200V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 300V 3A AXIAL |
542 |
|
- | Standard | 300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 300V | - | Through Hole | B, Axial | - | -55°C ~ 150°C |
|
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Microsemi |
DIODE GEN PURP 1.2KV 30A TO247 |
4.032 |
|
- | Standard | 1200V | 30A | 2.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 370ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
Microsemi |
UNRLS, FG, GEN2, SIC SBD, TO-220 |
3.078 |
|
- | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
|
|
|
Microsemi |
UNRLS, FG, GEN2, SIC SBD, TO-268 |
7.488 |
|
- | Silicon Carbide Schottky | 1200V | 30A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 20V SMAJ |
3.544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 30V SMAJ |
8.838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 40V SMAJ |
4.428 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE |
3.438 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | 80pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE |
2.502 |
|
- | Schottky | 20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A POWERMITE |
2.016 |
|
- | Schottky | 60V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 55pF @ 4V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |