Microsemi Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 1/86
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 15V 1A DO214BA |
306.126 |
|
- | Schottky | 15V | 1A | 220mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | - | Surface Mount | DO-214BA | DO-214BA | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 100V 5A POWERMITE |
51.768 |
|
- | Schottky | 100V | 5A | 810mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 150pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 40V 8A POWERMITE3 |
41.856 |
|
- | Schottky | 40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
24.036 |
|
- | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 400MA DO35 |
26.898 |
|
- | Standard | 400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 40A TO247 |
21.996 |
|
- | Standard | 600V | 40A | 2.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
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Microsemi |
DIODE GEN PURP 600V 400MA DO35 |
21.960 |
|
- | Standard | 600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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|
Microsemi |
DIODE SCHOTTKY 200V 120A TO247 |
56.868 |
|
- | Schottky | 200V | 120A | 950mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
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|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
3.622 |
|
- | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 20V 75MA DO35 |
17.147 |
|
- | Schottky | 20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 150V 1A D5A |
7.748 |
|
- | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA D5D |
16.554 |
|
- | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 150V 3A B-MELF |
15.936 |
|
- | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 40V 3A B-MELF |
1.027 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
80.832 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
28.122 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 60V 5A POWERMITE3 |
45.540 |
|
- | Schottky | 60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 150pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 15V 1A POWERMITE |
22.068 |
|
- | Schottky | 15V | 1A | 220mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 150pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 800V 1A DO214BA |
22.230 |
|
- | Standard | 800V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 20µA @ 800V | - | Surface Mount | DO-214BA | DO-214BA | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 100V 8A DO214AB |
26.832 |
|
- | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
33.144 |
|
- | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
15.996 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 30A TO247 |
84.054 |
|
- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1.2KV 40A TO247 |
12.486 |
|
- | Standard | 1200V | 40A | 3.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1KV 30A TO247 |
13.938 |
|
- | Standard | 1000V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 290ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 60A TO247 |
6.672 |
|
- | Standard | 600V | 60A | 1.8V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
11.028 |
|
- | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
6.696 |
|
- | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | Axial | B, Axial | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
151 |
|
- | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
7.488 |
|
- | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |