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Micron Technology Inc. Memoria

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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
ProduttoreMicron Technology Inc.
Record 8.604
Pagina 48/287
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di memoria
Formato memoria
Tecnologia
Dimensione della memoria
Interfaccia di memoria
Frequenza di clock
Tempo di ciclo di scrittura - Parola, pagina
Tempo di accesso
Tensione - Alimentazione
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
MT53D1024M32D4DT-053 WT:D TR
Micron Technology Inc.
IC DRAM 32G 1866MHZ FBGA
2.376
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
MT53D512M64D4NZ-046 WT:E TR
Micron Technology Inc.
IC DRAM 32G 2133MHZ
4.590
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
MT53D512M64D4RQ-046 WT:E TR
Micron Technology Inc.
IC DRAM 32G 2133MHZ
5.940
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
556-WFBGA
556-WFBGA (12.4x12.4)
MT53D512M64D4RQ-053 WT:E TR
Micron Technology Inc.
IC DRAM 32G 1866MHZ
5.094
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
556-WFBGA
556-WFBGA (12.4x12.4)
MT53E1G32D4NQ-053 WT:E
Micron Technology Inc.
LPDDR4 32G 1GX32 FBGA WT QDP
3.436
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NW-053 WT:E
Micron Technology Inc.
LPDDR4 32G 512MX64 FBGA WT QDP
5.958
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E1G32D4NQ-053 WT:E TR
Micron Technology Inc.
LPDDR4 32G 1GX32 FBGA WT QDP
3.420
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NW-053 WT:E TR
Micron Technology Inc.
LPDDR4 32G 512MX64 FBGA WT QDP
3.150
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D1024M32D4DT-046 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 32G FBGA
7.794
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2.133GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
-
-
MT53D512M64D8HR-053 WT:B TR
Micron Technology Inc.
IC DRAM LPDDR4 32G SMD
6.768
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NK-046 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 BGA
8.640
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NK-053 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
7.830
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D1024M32D4DT-046 WT:D
Micron Technology Inc.
IC DRAM LPDDR4 32G FBGA
2.543
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2.133GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
-
-
MT53E512M64D4NK-046 WT:D
Micron Technology Inc.
IC DRAM LPDDR4 BGA
585
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M64D4NK-053 WT:D
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
3.336
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTFC64GAPALBH-AIT
Micron Technology Inc.
IC FLASH 512G MMC
438
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MTFC64GAPALBH-AIT TR
Micron Technology Inc.
IC FLASH 512G MMC
2.052
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MT53D512M32D2DS-053 AUT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
8.658
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C
Surface Mount
-
-
MT53D512M32D2DS-053 AUT:D
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
143
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C
Surface Mount
-
-
MT29F512G08CECBBJ4-5M:B TR
Micron Technology Inc.
IC FLASH 512G PARALLEL 200MHZ
7.380
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
200MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
132-VBGA
132-VBGA (12x18)
MT44K32M18RB-093E:B
Micron Technology Inc.
IC DRAM 576M PARALLEL 1067MHZ
4.734
-
Volatile
DRAM
DRAM
576Mb (32M x 18)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT49H16M36SJ-18:B TR
Micron Technology Inc.
IC DRAM 576M PARALLEL 144FBGA
8.838
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
533MHz
-
15ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-FBGA (18.5x11)
MT29F512G08CEHBBJ4-3R:B TR
Micron Technology Inc.
IC FLASH 512G PARALLEL 333MHZ
6.912
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F512G08CEHBBJ4-3R:B
Micron Technology Inc.
IC FLASH 512G PARALLEL 333MHZ
1.924
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F64G08AECABH1-10ITZ:A TR
Micron Technology Inc.
IC FLASH 64G PARALLEL 100VBGA
8.622
-
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-VBGA
100-VBGA (12x18)
MT29F64G08AECABH1-10ITZ:A
Micron Technology Inc.
IC FLASH 64G PARALLEL 100VBGA
2.317
-
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-VBGA
100-VBGA (12x18)
MT52L1G32D4PG-093 WT:B
Micron Technology Inc.
IC DRAM 32G 1067MHZ FBGA
3.294
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
1067MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
178-VFBGA
178-FBGA (12x11.5)
MT52L1G32D4PG-107 WT:B TR
Micron Technology Inc.
IC DRAM 32G 933MHZ FBGA
2.520
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
178-VFBGA
178-FBGA (12x11.5)
MT52L512M64D4PQ-107 WT:B TR
Micron Technology Inc.
IC DRAM 32G 933MHZ FBGA
8.082
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
253-VFBGA
253-VFBGA (11x11.5)
MT52L512M64D4PQ-107 WT:B
Micron Technology Inc.
IC DRAM 32G 933MHZ 253VFBGA
4.248
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
Surface Mount
253-VFBGA
253-VFBGA (11x11.5)