Infineon Technologies Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 173/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 80V 10A 8-SOIC |
4.680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 10A (Ta) | 10V | 13.4mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | ±20V | 1620pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 14A DPAK |
4.122 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 620pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
4.266 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1020pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 13A TO-262 |
8.172 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 1.7A MICRO-8 |
6.336 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | ±12V | 240pF @ 15V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 12A 8-SOIC |
5.490 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 9.4mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | ±20V | 1560pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 26A DPAK |
5.040 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 65A DPAK |
8.856 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | ±20V | 1030pF @ 15V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
3.006 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Ta) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 160A DPAK |
4.806 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | ±20V | 4880pF @ 15V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 5.2A 8-SOIC |
6.750 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.1A (Ta) | 10V | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 1783pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 75A IPAK |
4.860 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 20A DPAK |
8.586 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK |
7.992 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 6.8A D2PAK |
4.464 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 24A TO-262 |
8.604 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | ±30V | 1960pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
2.340 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 8.3A 8-SOIC |
7.182 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.3A (Ta) | 10V | 18mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | ±20V | 1640pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK |
7.560 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Ta) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
3.204 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
2.100 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Ta) | 4.5V, 10V | - | - | - | ±20V | - | - | 140W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
7.056 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK |
3.060 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 60A DPAK |
6.300 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Ta) | - | 8.4mOhm @ 15A, 10V | - | 14nC @ 4.5V | - | 1190pF @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
4.680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 36A DPAK |
6.678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 36A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 180A D2PAK |
3.312 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 150µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 5.7A MICRO-8 |
2.988 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 5.7A (Ta) | 2.7V, 4.5V | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 650pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 62A D2PAK |
7.596 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 80V 38A IPAK |
6.048 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 38A (Tc) | 10V | 29mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1710pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |