Global Power Technologies Group Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreGlobal Power Technologies Group
Record 65
Pagina 1/3
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A DPAK-2 |
4.752 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | 158pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 3A TO220-2 |
8.208 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 158pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO220-2 |
4.662 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | 158pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 3A TO252-2 |
2.286 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 3A | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 158pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 15A TO252 |
7.614 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | - | 50µA @ 650V | 264pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 15A TO220-2 |
8.370 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 264pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO220-2 |
3.960 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 316pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 15A TO220-2 |
4.554 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | - | 50µA @ 650V | 264pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO252-2 |
7.092 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 316pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO263-2 |
3.598 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 632pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 29A TO252-2 |
6.894 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 29A (DC) | 1.9V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 632pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO247-2 |
8.550 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 40µA @ 600V | 527pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO220-2 |
7.362 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 632pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO220-2 |
2.160 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 527pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 24A TO220-2 |
4.176 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 508pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHTKY 1.2KV 24A TO252-2L |
7.722 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 508pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 12A TO220-2 |
7.560 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 632pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 58A TO247-2 |
4.734 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 58A (DC) | 1.65V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 1054pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 68A TO247-2 |
3.708 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 68A (DC) | 1.65V @ 24A | No Recovery Time > 500mA (Io) | - | 80µA @ 600V | 1265pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 82A TO247-2 |
4.914 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 82A (DC) | 1.9V @ 36A | No Recovery Time > 500mA (Io) | - | 500µA @ 600V | 1897pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 20A TO220-2 |
5.418 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 20A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 1270pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO220-2 |
5.850 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | - | 30µA @ 1200V | 952pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE GP 1.7KV 300A ADD-A-PAK |
3.348 |
|
Amp+™ | Standard | 1700V | 300A (DC) | 1.9V @ 300A | Standard Recovery >500ns, > 200mA (Io) | 540ns | - | - | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK® | -40°C ~ 150°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2 |
7.308 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO247-2 |
7.380 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 1581pF @ 1V, 1MHZ | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 50A TO247-2 |
4.860 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 50A (DC) | 1.65V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 600V | 2635pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
4.014 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3174pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO252-2 |
6.354 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 122pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO220-2 |
2.250 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO263-2 |
3.888 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 135°C |