GeneSiC Semiconductor Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreGeneSiC Semiconductor
Record 764
Pagina 1/26
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2.5A SMB |
28.740 |
|
- | Silicon Carbide Schottky | 1200V | 2.5A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 69pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2A DO214AA |
24.702 |
|
- | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIC SCHKY 1.2KV 2A TO252 |
25.458 |
|
- | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 40A DO5 |
116 |
|
- | Standard | 600V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 3.3KV 300MA TO220 |
18.708 |
|
- | Silicon Carbide Schottky | 3300V | 300mA | 1.7V @ 300mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 3300V | 42pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FP | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 100V 12A DO4 |
8.556 |
|
- | Standard | 100V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 40A DO5 |
6.408 |
|
- | Standard | 200V | 40A | 1.1V @ 40A | - | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.4KV 85A DO5 |
6.660 |
|
- | Standard, Reverse Polarity | 1400V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 60V DO4 |
8.172 |
|
- | Schottky, Reverse Polarity | 60V | 35A | 750mV @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 20V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 6A DO4 |
15.732 |
|
- | Standard | 200V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 6A DO4 |
20.004 |
|
- | Standard | 400V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4 |
15.348 |
|
- | Standard | 50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 6A DO4 |
22.548 |
|
- | Standard, Reverse Polarity | 400V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 6A DO4 |
22.992 |
|
- | Standard, Reverse Polarity | 50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
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GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 6A DO4 |
20.748 |
|
- | Standard, Reverse Polarity | 200V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |
92 |
|
- | Standard | 400V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 12A DO4 |
15.732 |
|
- | Standard, Reverse Polarity | 50V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 12A DO4 |
19.560 |
|
- | Standard, Reverse Polarity | 400V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 150V 60A DO5 |
6.348 |
|
- | Standard, Reverse Polarity | 150V | 60A | 1.1V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 60A DO5 |
6.180 |
|
- | Standard, Reverse Polarity | 600V | 60A | 1.1V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 35A DO5 |
8.550 |
|
- | Standard, Reverse Polarity | 1000V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 20A DO5 |
6.432 |
|
- | Standard, Reverse Polarity | 400V | 20A | 1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV 85A DO5 |
6.840 |
|
- | Standard, Reverse Polarity | 1600V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 40A DO5 |
6.924 |
|
- | Standard, Reverse Polarity | 1000V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 85A DO5 |
7.860 |
|
- | Standard | 400V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 300V 4A |
7.440 |
|
- | Silicon Carbide Schottky | 300V | 4A (DC) | 1.6V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 300V | 76pF @ 1V, 1MHz | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | -55°C ~ 225°C |
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GeneSiC Semiconductor |
SIC DIODE 1200V 2A TO-220-2 |
14.394 |
|
- | Silicon Carbide Schottky | 1200V | 12A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 2µA @ 1200V | 127pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
SIC DIODE 1200V 8A TO-220-2 |
18.012 |
|
- | Silicon Carbide Schottky | 1200V | 43A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 7µA @ 1200V | 545pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
SIC DIODE 1200V 10A TO-220-2 |
10.704 |
|
- | Silicon Carbide Schottky | 1200V | 54A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 660pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
SIC DIODE 1200V 15A TO-220-2 |
7.920 |
|
- | Silicon Carbide Schottky | 1200V | 82A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 1200V | 1089pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |