Diodes Incorporated Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreDiodes Incorporated
Record 1.718
Pagina 46/58
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Diodes Incorporated |
MOSFET N-CH 100V 55A TO252 |
3.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 10V | 28mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2245pF @ 50V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 40V 18A TO252 |
3.762 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 90A (Tc) | 10V | 6mOhm @ 86A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 2280pF @ 25V | - | 2.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 25A PWRDI5060-8 |
5.364 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta), 100A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 2.1W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
5.796 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
2.232 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI506 |
6.030 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
2.100 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH TO251 |
6.966 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.6A (Tc) | - | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 13.9nC @ 10V | - | 351pF @ 50V | - | 41W (Tc) | -55°C ~ 155°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET BVDSS: 501V 650V TO251 |
6.210 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 886pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO251 |
7.038 |
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Diodes Incorporated |
MOSFET N-CH 100V 108A TO220AB |
3.780 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 108A (Tc) | 10V | 9.5mOhm @ 13A, 10V | 3.5V @ 250µA | 53.7nC @ 10V | ±20V | 2592pF @ 50V | - | 2.4W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 20V POWERDI5060-8 |
4.248 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 2.5mOhm @ 25A, 10V | 1.4V @ 250µA | 476nC @ 10V | ±12V | 12826pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
5.418 |
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Diodes Incorporated |
MOSFET N-CH 60V 100A PWRDI5060-8 |
4.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta), 100A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 2.1W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 650V 7.7A ITO220AB |
3.204 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 7.7A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 25.2nC @ 10V | ±30V | 886pF @ 50V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET NCH 60V 100A TO220AB |
4.914 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 2.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 650V 7.7A TO220AB |
3.114 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 7.7A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 25.2nC @ 10V | ±30V | 886pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
5.562 |
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Diodes Incorporated |
MOSFET N-CH 900V 2.5A ITO220AB |
4.482 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9nC @ 10V | ±30V | 470pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET N-CH 650V 8A TO220AB |
5.292 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 1.3Ohm @ 4A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 1217pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO220AB T |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 9.5mOhm @ 13A, 10V | 4V @ 250µA | 56.4nC @ 10V | ±20V | 4468pF @ 50V | - | 2.5W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI506 |
5.004 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V TO220AB TU |
2.682 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 205A (Tc) | 10V | 3mOhm @ 90A, 10V | 4V @ 250µA | 75.6nC @ 10V | ±20V | 6865pF @ 20V | - | 156W | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 600V 12A TO220AB |
3.222 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 1587pF @ 16V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 4.3A 8-SOIC |
5.724 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 4.5V, 10V | 100mOhm @ 2A, 10V | - | 40nC @ 10V | ±20V | 1425pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-TSOP (0.130", 3.30mm Width) |
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Diodes Incorporated |
MOSFET NCH 60V 130A TO220AB |
8.820 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 21nC @ 10V | 20V | 2596pF @ 30V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET NCH 40V 100A TO220AB |
6.516 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.7mOhm @ 50A, 10V | 4V @ 250µA | 49.1nC @ 10V | ±20V | 3062pF @ 20V | - | 2.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 800V 7A ITO220AB |
3.384 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 4V @ 250µA | 35.4nC @ 10V | ±30V | 1253pF @ 25V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET BVDSS: 651V 800V TO251 |
5.670 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 700V | 7A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 18.4nC @ 10V | ±30V | 603pF @ 50V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |
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Diodes Incorporated |
MOSFET NCH 40V 100A TO220AB |
5.346 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.7mOhm @ 50A, 10V | 4V @ 250µA | 49.1nC @ 10V | ±20V | 3062pF @ 20V | - | 2.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |