PHK04P02T Datasheet
PHK04P02T Datasheet
Totale pagine: 13
Dimensioni: 299,82 KB
Nexperia
Questa scheda tecnica copre i numeri di parte di 1:
PHK04P02T,518
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Produttore Nexperia USA Inc. Serie - Tipo FET P-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 16V Corrente - Scarico continuo (Id) @ 25 ° C 4.66A (Tc) Tensione inverter (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V Vgs (th) (Max) @ Id 600mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V Vgs (massimo) ±8V Capacità di ingresso (Ciss) (Max) @ Vds 528pF @ 12.8V Funzione FET - Dissipazione di potenza (max) 5W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore 8-SO Pacchetto / Custodia 8-SOIC (0.154", 3.90mm Width) |