Vishay Siliconix Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreVishay Siliconix
Record 3.936
Pagina 77/132
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET N-CH 20V 60A POLARPAK |
2.070 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 3V @ 250µA | 155nC @ 10V | ±20V | 8800pF @ 10V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
3.400 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
3.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 1144pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
5.598 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 3V @ 250µA | 125nC @ 10V | ±20V | 5600pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 17A 8-SOIC |
4.392 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 17A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 25A, 4.5V | 2V @ 250µA | 70nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220AB |
6.840 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 21A TO220 |
5.868 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO263 |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 40A PPAK SO-8 |
5.058 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 40A (Tc) | 4.5V, 10V | 2.25mOhm @ 20A, 10V | 1.6V @ 250µA | 150nC @ 10V | ±16V | 6110pF @ 10V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 16V 18A PPAK SO-8 |
5.958 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 16V | 18A (Ta) | 2.5V, 4.5V | 3mOhm @ 29A, 4.5V | 2V @ 250µA | 80nC @ 4.5V | ±8V | 7340pF @ 8V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A TO-220AB |
8.946 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 430pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-262 |
2.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 3.5A TO220FP |
3.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 1100pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 5A TO-220AB |
5.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 620pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 21A TO-220 |
8.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | ±30V | 2322pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO247AC |
3.150 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | ±30V | 1780pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO247AC |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | ±30V | 1780pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
4.356 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 3094pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 52A D2PAK |
2.358 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 52A (Tc) | 10V, 15V | 38mOhm @ 20A, 15V | 4.5V @ 250µA | 185nC @ 15V | ±25V | 4220pF @ 25V | - | 3.12W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 5V | 77mOhm @ 10A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO263 |
4.590 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 22A TO-220FK |
2.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2415pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 40V 110A D2PAK |
8.964 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 3.1mOhm @ 30A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 6500pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
6.606 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 500V 12A D2PAK |
4.194 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 1375pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
5.202 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 29A TO220AB |
5.220 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 29A (Tc) | 10V | 112mOhm @ 14A, 10V | 4V @ 250µA | 140nC @ 10V | ±30V | 3405pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO247AC |
8.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB |
8.658 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±20V | 2656pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A D2PAK |
2.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |