Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 355/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED |
4.050 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED |
2.070 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED |
4.806 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED |
4.428 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED |
4.050 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MODULE DIODE 1200V 170A MAGNAPAK |
7.488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MODULE DIODE 1200V 250A MAGNAPAK |
2.646 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MODULE DIODE MAP COMPRESSED |
4.482 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MODULE DIODE MAP COMPRESSED |
8.928 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
MODULE DIODE MAP COMPRESSED |
8.910 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO204A |
4.500 |
|
- | Schottky | 40V | 2A | 650mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 130pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO204A |
5.868 |
|
- | Schottky | 60V | 2A | 750mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 120pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7A DO201AD |
4.608 |
|
TMBS® | Schottky | 45V | 7A | 560mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 1995pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6A P600 |
3.474 |
|
TMBS® | Schottky | 45V | 6A | 590mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | 1290pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7A DO201AD |
5.886 |
|
TMBS® | Schottky | 45V | 7A | 590mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 1995pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7A P600 |
7.326 |
|
TMBS® | Schottky | 45V | 7A | 570mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 45V | 1430pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6.5A P600 |
7.092 |
|
TMBS® | Schottky | 45V | 6.5A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 45V | 2050pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6.5A P600 |
4.446 |
|
TMBS® | Schottky | 45V | 6.5A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 45V | 2050pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 200V AXIAL |
3.276 |
|
TMBS® | Schottky | 200V | 2A | 1.23V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 200V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 200V 3A DO201AD |
5.274 |
|
TMBS® | Schottky | 200V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 200V 3A DO204AC |
2.196 |
|
TMBS® | Schottky | 200V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | 170pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A D2PAK |
5.526 |
|
- | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A D2PAK |
5.832 |
|
- | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO263AB |
8.604 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO263AB |
5.346 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO263AB |
7.506 |
|
- | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO263AB |
4.716 |
|
- | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO263AB |
7.020 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO263AB |
6.462 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO263AB |
3.276 |
|
- | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |