Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 332/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
4.950 |
|
- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220-2 |
4.518 |
|
FRED Pt® | Standard | 600V | 8A | 3.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A GP20 |
7.794 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AC |
2.196 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 750ns | 10µA @ 1000V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO214AC |
2.880 |
|
- | Schottky | 60V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AB |
7.416 |
|
- | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 600MA MPG06 |
6.732 |
|
- | Standard | 200V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 9pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO214AC |
7.830 |
|
- | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A TO277A |
5.022 |
|
eSMP® | Schottky | 40V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | 280pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A TO277A |
8.172 |
|
eSMP® | Schottky | 30V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | 280pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 15A D2PAK |
4.086 |
|
- | Schottky | 60V | 15A | 620mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 60V | 720pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 18A D2PAK |
2.100 |
|
- | Schottky | 45V | 18A | 600mV @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5mA @ 45V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 18A D2PAK |
4.824 |
|
- | Schottky | 45V | 18A | 600mV @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5mA @ 45V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
6.660 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 110pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A TO262 |
7.218 |
|
FRED Pt® | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D2PAK |
3.150 |
|
HEXFRED® | Standard | 600V | 15A (DC) | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D2PAK |
3.454 |
|
HEXFRED® | Standard | 600V | 15A (DC) | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
8.136 |
|
HEXFRED® | Standard | 1200V | 16A (DC) | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
3.600 |
|
HEXFRED® | Standard | 1200V | 16A (DC) | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
8.802 |
|
HEXFRED® | Standard | 600V | 25A (DC) | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
3.402 |
|
HEXFRED® | Standard | 600V | 25A (DC) | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 6A D2PAK |
7.938 |
|
- | Schottky | 35V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 35V | 400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 6A D2PAK |
7.848 |
|
- | Schottky | 35V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 35V | 400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
3.456 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A D2PAK |
2.754 |
|
- | Schottky | 80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 80V | 500pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6A D2PAK |
4.284 |
|
- | Schottky | 45V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | 400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 8A DPAK |
6.318 |
|
- | Standard | - | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DPAK |
4.194 |
|
HEXFRED® | Standard | 600V | 4A | 1.8V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 3µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 8A DPAK |
5.382 |
|
- | Standard | - | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 8A DPAK |
7.974 |
|
- | Standard | - | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |