Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 275/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
2.394 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
2.628 |
|
eSMP®, TMBS® | Schottky | 100V | 10A | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
5.706 |
|
eSMP®, TMBS® | Schottky | 100V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
3.456 |
|
eSMP®, TMBS® | Schottky | 100V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
8.712 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO213AB |
2.196 |
|
SUPERECTIFIER® | Standard | 1300V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1300V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 800V 100A ADD-A-PAK |
3.816 |
|
- | Standard | 800V | 100A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 800V | - | Chassis Mount | ADD-A-PAK (3 + 4) | ADD-A-PAK® | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
7.848 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8.370 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
2.268 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
8.154 |
|
- | Standard | 1000V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
7.722 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
8.730 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
7.362 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
7.290 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
4.698 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
5.202 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8.964 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
3.510 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
3.490 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
5.472 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
4.374 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
7.686 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
2.574 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
8.424 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
6.228 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
2.934 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |
6.696 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AC |
8.568 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
6.354 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |