Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 16/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
20.694 |
|
FRED Pt® | Standard | 200V | 60A | 1.08V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 70A DO203AB |
283 |
|
- | Standard | 400V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 150A POWIRTAB |
8.148 |
|
FRED Pt® | Standard | 200V | 150A | 1.13V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 50µA @ 200V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A TO247AC |
22.956 |
|
HEXFRED® | Standard | 600V | 25A | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
22.062 |
|
FRED Pt® | Standard | 600V | 60A | 1.68V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 81ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO247AC |
1.299 |
|
HEXFRED® | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 85A DO203AB |
6.864 |
|
- | Standard | 200V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
7.176 |
|
- | Standard | 400V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 70A DO203AB |
46 |
|
- | Standard | 800V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 120A D-67 |
1.277 |
|
- | Schottky | 100V | 120A | 910mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 100V | 2650pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 275A HALFPAK |
9.972 |
|
HEXFRED® | Standard | 400V | 275A | 2V @ 270A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 3mA @ 400V | - | Chassis Mount | D-67 HALF-PAK | HALF-PAK | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 240A D-67 |
8.748 |
|
- | Schottky | 100V | 240A | 950mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 100V | 5500pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 150MA SOD80 |
367.956 |
|
- | Standard | 50V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 600MA SOD80 |
501.162 |
|
- | Standard | 50V | 600mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO204AL |
54.264 |
|
- | Standard | 800V | 1.5A | 1.4V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 250MA SOD80 |
79.632 |
|
- | Standard | 200V | 250mA | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
230.154 |
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- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
132.702 |
|
- | Standard | 100V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 100V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
92.760 |
|
- | Standard | 400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 200MA SOT23 |
186.036 |
|
- | Standard | 200V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 200V DO-214AC SMA |
257.058 |
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- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 200V | 6pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
134.520 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 200MA SOD123 |
245.088 |
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- | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
23.573 |
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- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 600V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
777.504 |
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- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO219AB |
551.262 |
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- | Standard | 1000V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
245.916 |
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Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 70V 200MA SOT23 |
87.024 |
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Automotive, AEC-Q101 | Schottky | 70V | 200mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 100nA @ 50V | 2pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GPP 2A 200V DO-214AC SMA |
269.046 |
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- | Standard | 200V | 1.6A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.1µs | 5µA @ 200V | 11pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1.1A DO219AB |
255.786 |
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Automotive, AEC-Q101, eSMP® | Schottky | 40V | 1.1A | 540mV @ 1.1A | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 20µA @ 40V | 65pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | 175°C (Max) |