Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 149/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
5.562 |
|
- | Standard | 200V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
3.906 |
|
- | Standard | 800V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A TO277A |
4.194 |
|
eSMP® | Schottky | 50V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO213AB |
2.952 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
5.022 |
|
- | Avalanche | 600V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
6.030 |
|
- | Avalanche | 800V | 2A | 1.65V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 800V | 16pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A SOD57 |
7.884 |
|
- | Avalanche | 200V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.4A SOD57 |
3.960 |
|
- | Avalanche | 50V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.4A SOD57 |
6.894 |
|
- | Avalanche | 100V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.25A SOD57 |
7.902 |
|
- | Avalanche | 50V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.25A SOD57 |
6.354 |
|
- | Avalanche | 100V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A SOD57 |
5.544 |
|
- | Avalanche | 100V | 1.5A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
2.016 |
|
- | Avalanche | 800V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A SOD57 |
6.750 |
|
- | Avalanche | 400V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
6.804 |
|
- | Avalanche | 800V | 2A | 1.65V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 800V | 16pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A SOD57 |
5.976 |
|
- | Avalanche | 200V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.4A SOD57 |
3.150 |
|
- | Avalanche | 50V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.4A SOD57 |
2.124 |
|
- | Avalanche | 100V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.25A SOD57 |
5.346 |
|
- | Avalanche | 50V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.25A SOD57 |
8.262 |
|
- | Avalanche | 100V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A SOD57 |
3.150 |
|
- | Avalanche | 100V | 1.5A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A SOD57 |
3.852 |
|
- | Avalanche | 200V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
2.142 |
|
- | Avalanche | 800V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A SOD57 |
2.142 |
|
- | Avalanche | 400V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AA |
7.380 |
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- | Schottky | 90V | 1.5A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 2A DO214AA |
8.334 |
|
Automotive, AEC-Q101 | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AA |
8.586 |
|
Automotive, AEC-Q100 | Schottky | 90V | 1.5A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 2A DO214AA |
8.532 |
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Automotive, AEC-Q101 | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AA |
7.758 |
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Automotive, AEC-Q100 | Schottky | 90V | 1.5A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A DO214AA |
8.982 |
|
Automotive, AEC-Q101 | Standard | 50V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 50V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |