Toshiba Semiconductor and Storage Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreToshiba Semiconductor and Storage
Record 786
Pagina 23/27
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 13A 8-SOP |
4.986 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 80V | 13A (Ta) | 4.5V, 10V | 9.7mOhm @ 6.5A, 10V | 2.3V @ 1mA | 85nC @ 10V | ±20V | 7540pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 35A 8-SOP ADV |
8.496 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4.5V, 10V | 6.6mOhm @ 18A, 10V | 2.3V @ 1mA | 90nC @ 10V | ±20V | 7540pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A PS-8 |
6.858 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 12.9mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | ±20V | 2150pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B |
4.464 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 3.2mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | ±20V | 7800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.6A UFM |
5.382 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | ±8V | 640pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A TSM |
5.130 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 31mOhm @ 4A, 4.5V | 1V @ 1mA | 19nC @ 4.5V | ±8V | 1170pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.2A TSM |
5.346 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 5.2A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | ±8V | 640pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A TSM |
6.408 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 27.6mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1nC @ 10V | ±20V | 450pF @ 15V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 4A TSM |
7.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 10V | 53mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | ±12V | 270pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V .2A USM |
3.186 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | ±20V | 17pF @ 25V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V .5A CST4 |
5.652 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4V | 205mOhm @ 250mA, 4V | 1.1V @ 1mA | - | ±12V | 174pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount | CST4 (1.2x0.8) | 4-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 1.9A UFV |
8.424 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | ±12V | 123pF @ 15V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFV | 6-SMD (5 Leads), Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 9.5A UF6 |
3.870 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 9.5A (Ta) | 1.5V, 4.5V | 22.1mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | ±8V | 1100pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 4A UF6 |
6.156 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 2.5V | 54mOhm @ 2A, 2.5V | 1V @ 1mA | - | ±8V | 1700pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A ES6 |
5.958 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 2.5V | 136mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | ±8V | 568pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13A TO-220SIS |
5.130 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Ta) | 10V | 380mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 4A TO-220SIS |
6.390 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 1.2A UFM |
3.060 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 4V, 10V | 310mOhm @ 600mA, 10V | 2.3V @ 100µA | - | ±20V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH SGL 30V 0.1A SSM |
4.122 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.9A TSM |
2.502 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4V, 10V | 83mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | ±20V | 180pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A VESM |
7.632 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 9.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON |
3.330 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | ±20V | 2500pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON |
2.100 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | ±20V | 2500pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON |
3.852 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 16.9mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1300pF @ 10V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 26A 8TSON |
8.676 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta) | 4.5V, 10V | 6.4mOhm @ 13A, 10V | 2.3V @ 500µA | 35nC @ 10V | ±20V | 2900pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON |
4.806 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 8mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | ±20V | 2200pF @ 10V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 21A SBD 8TSON |
8.154 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 9.9mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20nC @ 10V | ±20V | 1900pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 8.3A PS-8 |
4.698 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V, 10V | 8.5mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | ±20V | 1270pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 4.8A PS-8 |
5.472 |
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U-MOSIII-H | P-Channel | MOSFET (Metal Oxide) | 40V | 4.8A (Ta) | 4.5V, 10V | 40mOhm @ 2.4A, 10V | 2V @ 1mA | 19nC @ 10V | ±20V | 800pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM |
2.268 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.8V, 4V | 158mOhm @ 800mA, 4V | 1V @ 1mA | - | ±8V | 250pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |