Toshiba Semiconductor and Storage Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreToshiba Semiconductor and Storage
Record 786
Pagina 13/27
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A UFM |
6.714 |
|
U-MOSII | P-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | - | - | ±20V | 137pF @ 15V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH+SBD VDS |
5.652 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
4.824 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
3.870 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH + SBD V |
6.732 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-30 |
2.484 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-30 |
3.834 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS60V |
8.118 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
3.508 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
8.586 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X34 SMALL SIGNAL NCH LOW RON MOS |
7.614 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2.5A TO-220SIS |
6.498 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 8A TO-220SIS |
7.866 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta) | 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 12.9nC @ 10V | ±20V | 530pF @ 10V | - | 18W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 2.5A TO-220SIS |
6.480 |
|
π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Ta) | 10V | 6.4Ohm @ 1.5A, 10V | 4V @ 1mA | 12nC @ 10V | ±30V | 470pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.2A CST3 |
5.364 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A CST3 S-MOS |
7.722 |
|
π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3 |
4.248 |
|
π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A USV |
5.886 |
|
π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | - | - | ±20V | 7.8pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
|
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Toshiba Semiconductor and Storage |
X34 PB-F UFM S-MOS (LF) TRANSIST |
5.454 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.1A (Ta) | 4V, 10V | 390mOhm @ 500mA, 10V | 1.8V @ 100µA | - | ±20V | 86pF @ 15V | - | 800mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V ES6 |
4.302 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4V | 126mOhm @ 1A, 4V | 1V @ 1mA | 3.4nC @ 10V | ±10V | 195pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
8.244 |
|
U-MOSVII | N-Channel | MOSFET (Metal Oxide) | 20V | 21A (Ta) | 2.5V, 4.5V | 5.8mOhm @ 10.5A, 4.5V | 1.2V @ 500µA | 16nC @ 5V | ±12V | 1860pF @ 10V | - | 1.9W (Ta), 30W (Tc) | 150°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 11A 8TSON-ADV |
2.934 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | ±20V | 660pF @ 15V | - | 700mW (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A VS6 |
8.172 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 2.5V, 4.5V | 55mOhm @ 2.5A, 4.5V | 1.2V @ 200µA | 10nC @ 5V | ±12V | 690pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 4.5A VS6 |
4.590 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | - | 56mOhm @ 2.2A, 10V | 2V @ 100µA | 14nC @ 10V | - | 510pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 5A 8SOP |
4.716 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 5A (Ta) | 4.5V, 10V | 52mOhm @ 2.5A, 10V | 2V @ 100µA | 20nC @ 10V | +20V, -25V | 890pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.3A TSM |
3.384 |
|
U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4V | 127mOhm @ 1A, 4V | - | 6.1nC @ 4V | ±8V | 335pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 15A 8SOP |
2.106 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8nC @ 10V | ±20V | 820pF @ 15V | - | 1W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
8.334 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 87A (Ta), 49A (Tc) | 4.5V, 10V | 6mOhm @ 24.5A, 10V | 2.4V @ 200µA | 30nC @ 10V | ±20V | 2700pF @ 20V | - | 1.8W (Ta), 81W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8SOP |
5.004 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 25mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5nC @ 10V | ±20V | 690pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 9A 8SOP |
8.352 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 22mOhm @ 4.5A, 10V | 2V @ 200µA | 39nC @ 10V | +20V, -25V | 1650pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |