Toshiba Semiconductor and Storage Transistor - Bipolare (BJT) - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - Bipolare (BJT) - Singolo
ProduttoreToshiba Semiconductor and Storage
Record 377
Pagina 10/13
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di transistor | Corrente - Collettore (Ic) (Max) | Tensione - Guasto Collettore Emettitore (Max) | Vce Saturazione (Max) @ Ib, Ic | Corrente - Taglio collettore (Max) | Guadagno di corrente CC (hFE) (Min) @ Ic, Vce | Potenza - Max | Frequenza - Transizione | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
TRANS NPN 1A 160V TO226-3 |
5.382 |
|
- | NPN | 1A | 160V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 60 @ 200mA, 5V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 1A 160V TO226-3 |
5.832 |
|
- | NPN | 1A | 160V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 60 @ 200mA, 5V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 1A 160V TO226-3 |
6.048 |
|
- | NPN | 1A | 160V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 60 @ 200mA, 5V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 1A 160V TO226-3 |
8.190 |
|
- | NPN | 1A | 160V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 60 @ 200mA, 5V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 100MA 300V TO226-3 |
5.382 |
|
- | NPN | 100mA | 300V | 1V @ 1mA, 10mA | 1µA (ICBO) | 30 @ 20mA, 10V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 100MA 300V TO226-3 |
7.434 |
|
- | NPN | 100mA | 300V | 1V @ 1mA, 10mA | 1µA (ICBO) | 30 @ 20mA, 10V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
4.284 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
8.172 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
8.496 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
3.780 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
5.076 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
2.628 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
7.092 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
3.240 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
5.058 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
7.650 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
4.428 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
7.470 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
8.694 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
7.542 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
5.526 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
3.276 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
3.420 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
4.842 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
5.202 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
8.892 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
6.354 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3 |
7.632 |
|
- | NPN | 2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 40V TO226-3 |
8.478 |
|
- | NPN | 2A | 40V | 500mV @ 1mA, 300mA | 10µA (ICBO) | 500 @ 400mA, 1V | 900mW | 220MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 80V TO226-3 |
2.664 |
|
- | NPN | 2A | 80V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |